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30 GHz bandwidth 850 nm VCSEL with sub-100 fJ/bit energy dissipation at 25-50 Gbit/s

Haglund, Erik, 1985 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Westbergh, Petter, 1981 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Gustavsson, Johan, 1974 (author)
Chalmers tekniska högskola,Chalmers University of Technology
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Haglund, Emanuel, 1988 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Larsson, Anders, 1957 (author)
Chalmers tekniska högskola,Chalmers University of Technology
Geen, M. (author)
Joel, A. (author)
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 (creator_code:org_t)
2015-07
2015
English.
In: Electronics Letters. - : Institution of Engineering and Technology (IET). - 1350-911X .- 0013-5194. ; 51:14, s. 1096-1097
  • Journal article (peer-reviewed)
Abstract Subject headings
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  • A high-speed and energy-efficient oxide-confined 850 nm vertical-cavity surface-emitting laser (VCSEL) for optical interconnects is presented. A record-high modulation bandwidth of 30 GHz is reached for a 3.5 mu m oxide aperture VCSEL, with 25 GHz bandwidth already at a bias current of 1.8 mA. The high bandwidth at low currents enables energy-efficient transmission with a dissipated heat energy in the VCSEL of

Subject headings

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Telekommunikation (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Telecommunications (hsv//eng)
TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Keyword

laser cavity resonators
optical interconnections
optical modulation
surface emitting lasers

Publication and Content Type

art (subject category)
ref (subject category)

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