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  • Gaur, A.P.S.University of Puerto Rico,Iowa State University (author)

Manipulation of exciton and trion quasiparticles in monolayer WS2 via charge transfer

  • Article/chapterEnglish2019

Publisher, publication year, extent ...

  • AIP Publishing,2019
  • electronicrdacarrier

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  • LIBRIS-ID:oai:research.chalmers.se:fe3b318a-5e1b-4258-b281-eaaad8220e28
  • https://research.chalmers.se/publication/513640URI
  • https://doi.org/10.1063/1.5113775DOI

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  • Language:English
  • Summary in:English

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  • Subject category:art swepub-publicationtype
  • Subject category:ref swepub-contenttype

Notes

  • Charge doping in transition metal dichalcogenide is currently a subject of high importance for future electronic and optoelectronic applications. Here, we demonstrate chemical doping in the CVD-grown monolayer (1L) of WS2 by a few commonly used laboratory solvents by investigating the room temperature photoluminescence (PL). The appearance of distinct trionic emission in the PL spectra and quenched PL intensities suggests n-type doping in WS2. The temperature-dependent PL spectra of the doped 1L-WS2 reveal a significant enhancement of trions emission intensity over the excitonic emission at low temperature, indicating the stability of trion at low temperature. The temperature-dependent exciton-trion population dynamic has been modeled using the law of mass action of trion formation. These results shed light on the solution-based chemical doping in 1L-WS2 and its profound effect on the photoluminescence which is essential for the control of optical and electrical properties for optoelectronic applications.

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  • Rivera, A.M.University of Puerto Rico (author)
  • Dash, Saroj Prasad,1975Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)saroj (author)
  • Dey, SandwipArizona State University (author)
  • Katiyar, R.S.University of Puerto Rico (author)
  • Sahoo, S.Homi Bhabha National Institute (HBNI) (author)
  • University of Puerto RicoIowa State University (creator_code:org_t)

Related titles

  • In:Applied Physics Letters: AIP Publishing115:170003-69511077-3118

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