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- Bruzzi, M, et al.
(author)
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Radiation-hard semiconductor detectors for SuperLHC
- 2005
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In: Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment. - : Elsevier BV. - 0167-5087 .- 0168-9002. ; 541:1-2, s. 189-201
-
Journal article (peer-reviewed)abstract
- An option of increasing the luminosity of the Large Hadron Collider (LHC) at CERN to 1035 cm-2 s-1 has been envisaged to extend the physics reach of the machine. An efficient tracking down to a few centimetres from the interaction point will be required to exploit the physics potential of the upgraded LHC. As a consequence, the semiconductor detectors close to the interaction region will receive severe doses of fast hadron irradiation and the inner tracker detectors will need to survive fast hadron fluences of up to above 1016cm-2. The CERN-RD50 project "Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders" has been established in 2002 to explore detector materials and technologies that will allow to operate devices up to, or beyond, this limit. The strategies followed by RD50 to enhance the radiation tolerance include the development of new or defect engineered detector materials (SiC, GaN, Czochralski and epitaxial silicon, oxygen enriched Float Zone silicon), the improvement of present detector designs and the understanding of the microscopic defects causing the degradation of the irradiated detectors. The latest advancements within the RD50 collaboration on radiation hard semiconductor detectors will be reviewed and discussed in this work.
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- Abbasi, A, et al.
(author)
-
Progress on Partial Discharge Detectionunder DC Voltage Stress
- 2019
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Conference paper (other academic/artistic)abstract
- Detection and evaluation of partial discharges (PD) is important for quality assurance and diagnosis ofelectrical insulation systems. With increasing use of DC voltages in electrical transmission and distributionsystems, the field of PD under DC voltage stress needs to be further investigated.CIGRE Working Group D1.63 was approved for start in May 2015, where available knowledge and experiencein particular concerning the field distribution in insulation systems used in DC voltage systems, and thephysical processes of the PD phenomena under DC voltage stress should be reviewed. In order of guidingto meaningful procedures for DC PD measurements of HV equipment thorough understanding of i) thedifferences of PD behaviour between AC and DC with respect to the physical process and ii) influencingfactors of operating conditions (as e.g. polarization, temperature etc.) of different insulation systems underDC stress and respective effects on PD phenomena had to be examined.
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- Bergenti, I., et al.
(author)
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Spin polarized La0.7Sr0.3MnO3 thin films on silicon
- 2007
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In: Journal of Magnetism and Magnetic Materials. - : Elsevier BV. - 0304-8853 .- 1873-4766. ; 312:2, s. 453-457
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Journal article (peer-reviewed)abstract
- La0.7Sr0.3MnO3 polycrystalline manganite thin films were grown on silicon (Si) substrates covered by SiOx amorphous native oxide. Curie temperatures of about 325 K were achieved for 70-nm-thick films. Strong room temperature XMCD signal was detected indicating high spin polarization at the surface. Cross-sectional TEM images show sharp interface between SiOx and manganite without signature of chemical reaction at the interface. Unusual sharp splitting of the manganite film was observed: on the top of a transition layer characterized by low crystalline order, a magnetically robust layer is formed. © 2007 Elsevier B.V. All rights reserved.
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