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Search: WFRF:(Osinsky D)

  • Result 11-15 of 15
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11.
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12.
  • Lim, W., et al. (author)
  • Migration and Luminescence Enhancement Effects of Deuterium in ZnO/ZnCdO Quantum Wells
  • 2008
  • In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 92, s. 032103-
  • Journal article (peer-reviewed)abstract
    • ZnO/ZnCdO/ZnO multiple quantum well samples grown on sapphire substrates by molecular beam epitaxy and annealed in situ were exposed to D2 plasmas at 150 °C. The deuterium showed migration depths of ~0.8 µm for 30 min plasma exposures, with accumulation of 2H in the ZnCdO wells. The photoluminescence (PL) intensity from the samples was increased by factors of 5 at 5 K and ~20 at 300 K as a result of the deuteration, most likely due to passivation of competing nonradiative centers. Annealing up to 300 °C led to increased migration of 2H toward the substrate but no loss of deuterium from the sample and little change in the PL intensity. The initial PL intensities were restored by annealing at >=400 °C as 2H was evolved from the sample (~90% loss by 500 °C). By contrast, samples without in situ annealing showed a decrease in PL intensity with deuteration. This suggests that even moderate annealing temperatures lead to degradation of ZnCdO quantum wells.
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15.
  • Wang, Xingjun, 1972-, et al. (author)
  • Band gap properties of Zn1−xCdxO alloys grown by molecular-beam epitaxy
  • 2006
  • In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 89, s. 151909-
  • Journal article (peer-reviewed)abstract
    • Optical absorption and reflectance measurements are performed to evaluate compositional and temperature dependences of band gap energies of Zn1−xCdxO alloys grown by molecular-beam epitaxy. The compositional dependence of the band gap energy, determined by taking into account excitonic contributions, is shown to follow the trend Eg(x) = 3.37−2.82x+0.95x2. Incorporation of Cd was also shown to somewhat slow down thermal variation of the band gap energies, beneficial for future device applications.
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