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Microwave synthesis...
Microwave synthesis and enhancement of thermoelectric figure of merit in half-Heusler TiNiSbxSn1-x
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- Lei, Ying (författare)
- Anhui University of Technology, CHN
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- Cheng, Cheng (författare)
- Anhui University of Technology, CHN
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- Li, Yu (författare)
- Anhui University of Technology, CHN
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- Wan, Rundong (författare)
- Blekinge Tekniska Högskola,Institutionen för maskinteknik
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- Wang, Meng (författare)
- Anhui University of Technology, CHN
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(creator_code:org_t)
- Elsevier Ltd, 2017
- 2017
- Engelska.
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Ingår i: Ceramics International. - : Elsevier Ltd. - 0272-8842 .- 1873-3956. ; 43:12, s. 9343-9347
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- The preparation of half-Heusler thermoelectric bulk is complex and time-consuming. In the present work, Sb doped TiNiSbxSn1-x bulks (x=0.01, 0.02, 0.03 and 0.04) were prepared via cold press forming, microwave synthesis and sintering in vacuumed sealed quartz in a few minutes. The microstructures of samples were characterized by using X-ray diffractometer (XRD) and scanning electron microscopy (SEM) techniques. The thermoelectric properties i.e. Seebeck coefficient (S), electrical resistivity (ρ) and thermal conductivity (κ) were measured on Seebeck coefficient/resistance analysis system (S/RAs) and laser flash thermal analyzer (LFT). The results show that high purity single phase was obtained after microwave sintering. The point defects came from Sb doping and the in-suit nanostructures attributed to microwave sintering process were found to lead to special microstructure. The variation trends of S, ρ, κ with temperature were analyzed. The influences of Sb doping to electrical and thermal properties were discussed. The electrical resistivity was decreased by ~84% at the cost of decreasing the Seebeck coefficient by ~25-30%. The maximum power factor of 2560 μWm-1K-2 was achieved at 673K. The lattice and total thermal conductivities are merely 1.1-1.3 and 3.8-4.0 Wm-1K-1 respectively. The thermoelectric figure of merit for TiNiSb0.03Sn0.97 was enhanced from 0.30 (773K) to 0.44 (673K and 723K) when compared to that of non-doped TiNiSn. © 2017 Elsevier Ltd and Techna Group S.r.l.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Maskinteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Mechanical Engineering (hsv//eng)
Nyckelord
- Half-Heusler alloys
- Microwave sintering
- Microwave synthesis
- Sb doping
- Thermoelectric figure of merit
- Electric conductivity
- Microstructure
- Microwave heating
- Microwaves
- Point defects
- Scanning electron microscopy
- Seebeck coefficient
- Sintering
- Thermoanalysis
- Thermoelectric equipment
- Tin
- Thermal conductivity
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- art (ämneskategori)
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