Sökning: onr:"swepub:oai:DiVA.org:kth-20678" >
Nature of the root ...
Nature of the root 3 alpha to 3 x 3 reversible phase transition at low temperature in Sn/Ge (111)
-
Le Lay, G. (författare)
-
Rad, M. G. (författare)
-
- Göthelid, Mats (författare)
- KTH,Materialvetenskap
-
visa fler...
-
- Karlsson, Ulf O. (författare)
- KTH,Fysik
-
Avila, J. (författare)
-
Asensio, M. C. (författare)
-
visa färre...
-
(creator_code:org_t)
- 2001
- 2001
- Engelska.
-
Ingår i: Applied Surface Science. - 0169-4332 .- 1873-5584. ; 175, s. 201-206
- Relaterad länk:
-
https://urn.kb.se/re...
-
visa fler...
-
https://doi.org/10.1...
-
visa färre...
Abstract
Ämnesord
Stäng
- Metal-induced superstructures on semiconductors at sub-monolayer coverages have been mostly studied at, or above, room temperature. Yet, recently, several reversible phase transitions, like, e.g. the root3 x root3 alpha to 3 x 3 transition in the Pb, Sn/Ge (111) prototypical systems, have been discovered below RT. The origin of these new reconstructions is very intriguing and is a matter of strong debate. Some groups privilege electronic instabilities leading to charge ordered states at low temperature (LT), while other favor dynamical effects and the formation a kind of bond density waves (BDW's) at LT. Besides these intrinsic behaviors, the role played by inevitable defects has also been emphasized by several authors. Focussing especially on the Sn/Ge (111) system, we present a detailed analysis of the spectroscopic signatures of each phase in photoemission measurements. We show that static models are impossible to reconcile with these measurements.
Nyckelord
- semiconductors
- photoemission
- transition
- charge-density-wave
- distortion
- surfaces
- defects
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
Hitta via bibliotek
Till lärosätets databas