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Critical concentrat...
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da Silva, A. F.
(författare)
Critical concentration for the doping-induced metal-nonmetal transition in cubic and hexagonal GaN
- Artikel/kapitelEngelska2002
Förlag, utgivningsår, omfång ...
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AIP Publishing,2002
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printrdacarrier
Nummerbeteckningar
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LIBRIS-ID:oai:DiVA.org:kth-21838
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https://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-21838URI
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https://doi.org/10.1063/1.1499202DOI
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Språk:engelska
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Sammanfattning på:engelska
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Ämneskategori:ref swepub-contenttype
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Ämneskategori:art swepub-publicationtype
Anmärkningar
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QC 20100525
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The critical concentration for the metal-nonmetal transition has been calculated for n-type and p-type GaN. Both cubic and hexagonal structures of GaN have been considered. Three different computational methods have been utilized: the first is the original Mott model, the second is an extended Mott-Hubbard model, and the third method is based on total energy of the metallic and the nonmetallic phases. All three methods show a similar value of the critical concentration, about 10(18) and 10(20) cm(-3) for n-type and p-type doped materials, respectively.
Ämnesord och genrebeteckningar
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acceptor binding-energies
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optical-properties
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shallow donors
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n-type
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doped semiconductors
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dynamical properties
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dielectric function
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wurtzite gan
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aln
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si
Biuppslag (personer, institutioner, konferenser, titlar ...)
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Persson, Clas
(författare)
Sammanhörande titlar
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Ingår i:Journal of Applied Physics: AIP Publishing92:5, s. 2550-25550021-89791089-7550
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