Influence of self heating in a BiCMOS on SOI technology

• Self heating in a 0.25mum BiCMOS technology with different isolation structures is characterized. Thermal resistance values for single- and multiple-emitter devices are extracted and reported. The dependence of the thermal resistance on the emitter aspect ratio is critical to take into consideration when determining the isolation scheme for devices. 2-D electro-thermal simulations are performed and compared to experimental results. The impact of metallization on the self-heating in the device is examined through simulations.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

Aspect ratio

Capacitance

Computer simulation

Heat resistance

Heating

Metallizing

Polysilicon

Silicon on insulator technology

Publikations- och innehållstyp

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