Sökning: onr:"swepub:oai:DiVA.org:kth-50538" >
Tungsten work funct...
Tungsten work function engineering for dual metal gate nano-CMOS
-
Efavi, J K (författare)
-
Mollenhauer, T (författare)
-
Wahlbrink, T (författare)
-
visa fler...
-
Gottlob, H D B (författare)
-
- Lemme, Max C., 1970- (författare)
- AMO GmbH, AMICA, Aachen, Germany
-
Kurz, H (författare)
-
visa färre...
-
(creator_code:org_t)
- Springer Science and Business Media LLC, 2005
- 2005
- Engelska.
-
Ingår i: Journal of materials science. Materials in electronics. - : Springer Science and Business Media LLC. - 0957-4522 .- 1573-482X. ; 16:7, s. 433-436
- Relaterad länk:
-
https://urn.kb.se/re...
-
visa fler...
-
https://doi.org/10.1...
-
visa färre...
Abstract
Ämnesord
Stäng
- A buffer layer technology for work function engineering of tungsten for dual metal gate Nano-CMOS is investigated. For the first time, tungsten is used as a p-type gate material using 1 nm of sputtered Aluminum Nitride (AlNx) as a buffer layer on silicon dioxide (SiO2) gate dielectric. A tungsten work function of 5.12 eV is realized using this technology in contrast to a mid-gap value of 4.6 eV without a buffer layer. Device characteristics of a p-MOSFET on silicon-on-insulator (SOI) substrate fabricated with this technology are presented.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology (hsv//eng)
Nyckelord
- Aluminum nitride; CMOS integrated circuits; Composition effects; Dielectric devices; Energy gap; MOSFET devices; Nanotechnology; Silica; Silicon on insulator technology
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
Hitta via bibliotek
Till lärosätets databas