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Comparative study o...
Comparative study on the impact of TiN and Mo metal gates on MOCVD-grown HfO2 and ZrO2 high-kappa dielectrics for CMOS technology
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Abermann, S. (författare)
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Sjoblom, G. (författare)
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Efavi, J. (författare)
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- Lemme, Max C., 1970- (författare)
- AMO GmbH, AMICA, Aachen, Germany
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Olsson, J. (författare)
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Bertagnolli, E. (författare)
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(creator_code:org_t)
- AIP, 2007
- 2007
- Engelska.
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Ingår i: Physics of Semiconductors, Pts A and B. - : AIP. - 9780735403970 ; , s. 293-294
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- We compare metal oxide semiconductor capacitors, investigating Titanium-Nitride and Molybdenum as gate materials, as well as metal organic chemical vapor deposited ZrO2 and HfO2 as high-kappa dielectrics, respectively. The impact of different annealing steps on the electrical characteristics of the various gate stacks is a further issue. The positive effect of post metallization annealing in forming gas atmosphere as well as observed mid-gap pinning of TiN and Mo metal gates is presented.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology (hsv//eng)
Nyckelord
- dielectrics
- high-k
- metal gate
- MOCVD
- ZrO2
- HfO2
- TiN
- Mo
Publikations- och innehållstyp
- ref (ämneskategori)
- kon (ämneskategori)
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