Comparison of F2 plasma chemistries for deep etching of SiC

• A number of F2-based plasma chemistries (NF3, SF6, PF5 and BF3) were investigated for high rate etching of SiC. The most advantageous of these is SF6, based on the high rate (0.6 ÎŒm·min-) it achieves and its relatively low cost compared to NF3. The changes in electrical properties of the near-surface region are relatively minor when the incident ion energy is kept below approximately 75 eV. At a process pressure of 5 m Torr, the SiC etch rate falls-off by ∌15% in 30 ÎŒm diameter via holes compared to larger diameter holes (> 60 ÎŒm diameter) or open areas on the mask.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

Electric properties

Fluorine compounds

Inductively coupled plasma

Ions

Plasma etching

Pressure effects

Diameter holes

Ion energy

Plasma chemistry

Silicon carbide

Publikations- och innehållstyp

ref (ämneskategori)

kon (ämneskategori)