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Transmorphic epitax...
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Lu, JunLinköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
(författare)
Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high-breakdown thin GaN transistors
- Artikel/kapitelEngelska2019
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AMER INST PHYSICS,2019
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electronicrdacarrier
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LIBRIS-ID:oai:DiVA.org:liu-163045
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https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-163045URI
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https://doi.org/10.1063/1.5123374DOI
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Språk:engelska
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Sammanfattning på:engelska
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Ämneskategori:art swepub-publicationtype
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Funding Agencies|Knut and Alice Wallenberg Foundation Scholar Grant [KAW-2016-0358]; European UnionEuropean Union (EU) [823260]; KAW foundation; Swedish Foundation for Strategic ResearchSwedish Foundation for Strategic Research [EM16-0004]
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Interfaces containing misfit dislocations deteriorate electronic properties of heteroepitaxial wide bandgap III-nitride semiconductors grown on foreign substrates, as a result of lattice and thermal expansion mismatches and incompatible chemical bonding. We report grain-boundary-free AlN nucleation layers (NLs) grown by metalorganic chemical vapor deposition on SiC (0001) substrates mediated by an interface extending over two atomic layers L1 and L2 with composition (Al1/3Si2/3)(2/3)N and (Al2/3Si1/3)N, respectively. It is remarkable that the interfaces have ordered vacancies on one-third of the Al/Si position in L1, as shown here by analytical scanning transmission electron microscopy and ab initio calculations. This unique interface is coined the out-of-plane compositional-gradient with in-plane vacancy-ordering and can perfectly transform the in-plane lattice atomic configuration from the SiC substrate to the AlN NL within 1 nm thick transition. This transmorphic epitaxial scheme enables a critical breakdown field of similar to 2 MV/cm achieved in thin GaN-based transistor heterostructures grown on top. Lateral breakdown voltages of 900 V and 1800 V are demonstrated at contact distances of 5 and 20 mu m, respectively, and the vertical breakdown voltage is amp;gt;= 3 kV. These results suggest that the transmorphic epitaxially grown AlN layer on SiC may become the next paradigm for GaN power electronics. (C) 2019 Author(s).
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Biuppslag (personer, institutioner, konferenser, titlar ...)
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Chen, Jr-TaiSweGaN AB, Teknikringen 8D, SE-58330 Linkoping, Sweden
(författare)
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Dahlqvist, Martin,1982-Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten(Swepub:liu)marda09
(författare)
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Kabouche, RiadInst Elect Microelect and Nanotechnol, France
(författare)
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Medjdoub, FaridInst Elect Microelect and Nanotechnol, France
(författare)
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Rosén, JohannaLinköpings universitet,Tunnfilmsfysik,Tekniska fakulteten(Swepub:liu)johro07
(författare)
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Kordina, OlofSweGaN AB, Teknikringen 8D, SE-58330 Linkoping, Sweden
(författare)
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Hultman, LarsLinköpings universitet,Tunnfilmsfysik,Tekniska fakulteten(Swepub:liu)larhu75
(författare)
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Linköpings universitetTunnfilmsfysik
(creator_code:org_t)
Sammanhörande titlar
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Ingår i:Applied Physics Letters: AMER INST PHYSICS115:220003-69511077-3118
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