Sökning: onr:"swepub:oai:DiVA.org:liu-196762" >
beta-Ga2O3 MOSFETs ...
beta-Ga2O3 MOSFETs electrical characteristic study of various etching depths grown on sapphire substrate by MOCVD
-
- Lu, Chan-Hung (författare)
- Natl Yang Ming Chiao Tung Univ, Taiwan
-
- Tarntair, Fu-Gow (författare)
- Natl Yang Ming Chiao Tung Univ, Taiwan
-
- Kao, Yu-Cheng (författare)
- Natl Chung Hsing Univ, Taiwan
-
visa fler...
-
- Tumilty, Niall (författare)
- Natl Yang Ming Chiao Tung Univ, Taiwan
-
- Shieh, Jia-Min (författare)
- Taiwan Semicond Res Inst TSRI, Taiwan
-
- Hsu, Shao-Hui (författare)
- Taiwan Semicond Res Inst TSRI, Taiwan
-
- Hsiao, Ching-Lien (författare)
- Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten
-
- Horng, Ray-Hua (författare)
- Natl Yang Ming Chiao Tung Univ, Taiwan
-
visa färre...
-
(creator_code:org_t)
- SPRINGER, 2023
- 2023
- Engelska.
-
Ingår i: DISCOVER NANO. - : SPRINGER. - 2731-9229. ; 18:1
- Relaterad länk:
-
https://liu.diva-por... (primary) (Raw object)
-
visa fler...
-
https://urn.kb.se/re...
-
https://doi.org/10.1...
-
visa färre...
Abstract
Ämnesord
Stäng
- beta-Ga2O3 thin films with both a 45 nm Si-doped conductive epilayer and unintentionally doped epilayer were grown on c-plane sapphire substrate by metalorganic chemical vapor deposition. beta-Ga2O3 based metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated with gate recess depths of 20 nm and 40 nm (it indicated gate depth with 70 nm and 50 nm, respective), respectively, and without said recessing process. The conductivity of beta-Ga2O3 epilayers was improved through low in situ doping using a tetraethoxysilane precursor to increase MOSFET forward current density. After recessing, MOSFET operation was transferred from depletion to enhanced mode. In this study, the maximum breakdown voltage of the recessed 40 nm transistor was 770 V. The etching depth of a recessed-gate device demonstrates its influence on device electrical performance.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Nyckelord
- High power MOSFETs; Enhancement mode; beta-Ga2O3; Recessed gate; MOCVD
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
Hitta via bibliotek
Till lärosätets databas