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Thin-film design of...
Thin-film design of amorphous hafnium oxide nanocomposites enabling strong interfacial resistive switching uniformity
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- Hellenbrand, Markus (författare)
- Univ Cambridge, England
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- Bakhit, Babak (författare)
- Linköpings universitet,Tunnfilmsfysik,Tekniska fakulteten,Univ Cambridge, England; Univ Cambridge, England
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- Dou, Hongyi (författare)
- Purdue Univ, IN 47907 USA
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- Xiao, Ming (författare)
- Univ Cambridge, England
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- Hill, Megan O. (författare)
- Univ Cambridge, England
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- Sun, Zhuotong (författare)
- Univ Cambridge, England
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- Mehonic, Adnan (författare)
- UCL, England
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- Chen, Aiping (författare)
- Los Alamos Natl Lab, NM 87545 USA
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- Jia, Quanxi (författare)
- Univ Buffalo, NY 14260 USA
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- Wang, Haiyan (författare)
- Purdue Univ, IN 47907 USA
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- MacManus-Driscoll, Judith L. (författare)
- Univ Cambridge, England
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(creator_code:org_t)
- AMER ASSOC ADVANCEMENT SCIENCE, 2023
- 2023
- Engelska.
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Ingår i: Science Advances. - : AMER ASSOC ADVANCEMENT SCIENCE. - 2375-2548. ; 9:25
- Relaterad länk:
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https://liu.diva-por... (primary) (Raw object)
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
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- A design concept of phase-separated amorphous nanocomposite thin films is presented that realizes interfacial resistive switching (RS) in hafnium oxide-based devices. The films are formed by incorporating an average of 7% Ba into hafnium oxide during pulsed laser deposition at temperatures <= 400 degrees C. The added Ba prevents the films from crystallizing and leads to similar to 20-nm-thin films consisting of an amorphous HfOx host matrix interspersed with similar to 2-nm-wide, similar to 5-to-10-nm-pitch Ba-rich amorphous nanocolumns penetrating approximately two-thirds through the films. This restricts the RS to an interfacial Schottky-like energy barrier whose magnitude is tuned by ionic migration under an applied electric field. Resulting devices achieve stable cycle-to-cycle, device-to-device, and sample-to-sample reproducibility with a measured switching endurance of >= 10(4) cycles for a memory window >= 10 at switching voltages of +/- 2 V. Each device can be set to multiple intermediate resistance states, which enables synaptic spike-timing-dependent plasticity. The presented concept unlocks additional design variables for RS devices.
Ämnesord
- NATURVETENSKAP -- Fysik -- Atom- och molekylfysik och optik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Atom and Molecular Physics and Optics (hsv//eng)
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Hellenbrand, Mar ...
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Bakhit, Babak
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Dou, Hongyi
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Xiao, Ming
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Hill, Megan O.
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Sun, Zhuotong
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visa fler...
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Mehonic, Adnan
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Chen, Aiping
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Jia, Quanxi
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Wang, Haiyan
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MacManus-Driscol ...
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visa färre...
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