Impurity resistivity of the double-donor system Si: P,Bi

da Silva, AFInst Nacl Pesquisas Espaciais, Lab Associado Sensores & Mat, LAS, BR-12201970 Sao Jose Dos Campos, Brazil Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Univ Fed Rio Grande Sul, Inst Fis, BR-91501970 Porto Alegre, RS, Brazil CUNY City Coll, Dept Phys, New York, NY 10031 USA (författare)

Impurity resistivity of the double-donor system Si : P,Bi

The electrical resistivity of the shallow double-donor system Si:P,Bi, prepared by ion implantation, was investigated in the temperature range from 1.7 to 300 K. Good agreement was obtained between the measured resistivities and resistivities calculated by a generalized Drude approach for the same temperatures and dopant concentrations. The critical impurity concentration for the metal-nonmetal transition for the double-doped Si:P,Bi system was found to lie between the critical concentrations of the two single-doped systems, Si:P and Si:Bi. [S0163-1829(99)11747-8].

Sernelius, BoLinköpings universitet,Tekniska högskolan,Teoretisk Fysik(Swepub:liu)bose02 (författare)
de Souza, JPInst Nacl Pesquisas Espaciais, Lab Associado Sensores & Mat, LAS, BR-12201970 Sao Jose Dos Campos, Brazil Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Univ Fed Rio Grande Sul, Inst Fis, BR-91501970 Porto Alegre, RS, Brazil CUNY City Coll, Dept Phys, New York, NY 10031 USA (författare)
Boudinov, HInst Nacl Pesquisas Espaciais, Lab Associado Sensores & Mat, LAS, BR-12201970 Sao Jose Dos Campos, Brazil Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Univ Fed Rio Grande Sul, Inst Fis, BR-91501970 Porto Alegre, RS, Brazil CUNY City Coll, Dept Phys, New York, NY 10031 USA (författare)
Zheng, HR (författare)
Sarachik, MPInst Nacl Pesquisas Espaciais, Lab Associado Sensores & Mat, LAS, BR-12201970 Sao Jose Dos Campos, Brazil Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Univ Fed Rio Grande Sul, Inst Fis, BR-91501970 Porto Alegre, RS, Brazil CUNY City Coll, Dept Phys, New York, NY 10031 USA (författare)
Inst Nacl Pesquisas Espaciais, Lab Associado Sensores & Mat, LAS, BR-12201970 Sao Jose Dos Campos, Brazil Linkoping Univ, Dept Phys & Measurement Technol, S-58183 Linkoping, Sweden Univ Fed Rio Grande Sul, Inst Fis, BR-91501970 Porto Alegre, RS, Brazil CUNY City Coll, Dept Phys, New York, NY 10031 USATekniska högskolan (creator_code:org_t)

Ingår i:Physical Review B Condensed Matter60:23, s. 15824-158280163-18291095-3795

Av författaren/redakt...: da Silva, AF; Sernelius, Bo; de Souza, JP; Boudinov, H; Zheng, HR; Sarachik, MP

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