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A 900 MHz 26.8 dBm ...
A 900 MHz 26.8 dBm differential Class-E CMOS power amplifier in German Microwave Conference Digest of Papers, GeMIC 2010, vol , issue , pp 276-279
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- Khan, H.R. (författare)
- Electronic Engineering Department, NED University of Engineering and Technology, Karachi, Pakistan
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- Wahab, Q. (författare)
- Electronic Engineering Department, NED University of Engineering and Technology, Karachi, Pakistan
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- Fritzin, Jonas (författare)
- Linköpings universitet,Elektroniska komponenter,Tekniska högskolan
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visa fler...
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- Alvandpour, Atila (författare)
- Linköpings universitet,Elektroniska komponenter,Tekniska högskolan
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- Wahab, Qamar (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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visa färre...
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(creator_code:org_t)
- 2010
- 2010
- Engelska.
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Ingår i: German Microwave Conference Digest of Papers, GeMIC 2010. ; , s. 276-279
- Relaterad länk:
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https://urn.kb.se/re...
Abstract
Ämnesord
Stäng
- A 900 MHz differential Class-E amplifier with finite dc inductance has been designed in CMOS. The large inductance of RF choke has been replaced with a finite inductance that provides the required inductive reactance of the class E amplifier. Resonance circuit is realized without series inductor by novel use of lattice LC balun. The amplifier delivers 26.8 dBm power to a 50 O load from a 2.2 V supply. A maximum Power Added Efficiency (PAE) of 43% is achieved.
Nyckelord
- Component; Class E; Differential amplifier; Finite inductance; Lattice LC balun
- TECHNOLOGY
- TEKNIKVETENSKAP
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