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Defects in N, O and...
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Stehr, Jan EricLinköpings universitet,Funktionella elektroniska material,Tekniska högskolan
(författare)
Defects in N, O and N, Zn implanted ZnO bulk crystals
- Artikel/kapitelEngelska2013
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American Institute of Physics (AIP),2013
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electronicrdacarrier
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LIBRIS-ID:oai:DiVA.org:liu-91343
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https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-91343URI
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https://doi.org/10.1063/1.4795261DOI
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Språk:engelska
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Sammanfattning på:engelska
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Ämneskategori:ref swepub-contenttype
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Ämneskategori:art swepub-publicationtype
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Funding Agencies|Swedish Research Council|621-2010-3971|
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Comprehensive characterization of defects formed in bulk ZnO single crystals co-implanted with N and Zn as well as N and O atoms is performed by means of optically detected magnetic resonance (ODMR) complemented by Raman and photoluminescence (PL) spectroscopies. It is shown that in addition to intrinsic defects such as Zn vacancies and Zn interstitials, several N-related defects are formed in the implanted ZnO. The prevailed configuration of the defects is found to depend on the choices of the co-implants and also the chosen annealing ambient. Specifically, co-implantation with O leads to the formation of (i) defects responsible for local vibrational modes at 277, 511, and 581 cm−1; (ii) a N-related acceptor with the binding energy of 160 ± 40 meV that is involved in the donor-acceptor pair emission at 3.23 eV; and (iii) a deep donor and a deep NO acceptor revealed from ODMR. Activation of the latter defects is found to require post-implantation annealing in nitrogen ambient. None of these defects are detected when N is co-implanted with Zn. Under these conditions, the dominant N-induced defects include a deep center responsible for the 3.3128 eV PL line, as well as an acceptor center of unknown origin revealed by ODMR. Formation mechanisms of the studied defects and their role in carrier recombination are discussed.
Ämnesord och genrebeteckningar
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TECHNOLOGY
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TEKNIKVETENSKAP
Biuppslag (personer, institutioner, konferenser, titlar ...)
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Wang, XingjunLinköpings universitet,Funktionella elektroniska material,Tekniska högskolan(Swepub:liu)xinwa58
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Filippov, StanislavLinköpings universitet,Funktionella elektroniska material,Tekniska högskolan(Swepub:liu)stafi86
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Pearton, S J.University of Florida, FL USA
(författare)
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Gueorguiev Ivanov, IvanLinköpings universitet,Halvledarmaterial,Tekniska högskolan(Swepub:liu)ivaiv28
(författare)
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Chen, WeiminLinköpings universitet,Funktionella elektroniska material,Tekniska högskolan(Swepub:liu)weich55
(författare)
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Buyanova, IrinaLinköpings universitet,Funktionella elektroniska material,Tekniska högskolan(Swepub:liu)iribo40
(författare)
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Linköpings universitetFunktionella elektroniska material
(creator_code:org_t)
Sammanhörande titlar
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Ingår i:Journal of Applied Physics: American Institute of Physics (AIP)113:10, s. 103509-0021-89791089-7550
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