DC field dependent properties of Na0.5 K0.5 NbO3/SiO2/Si structures at millimeter-wave frequencies

Abadei, S.Department of Microelectronics, Chalmers University of Technology, Gothenburg, Sweden (författare)

Validerad; 2001; 20060917 (cira)
Dielectric properties of laser-ablated 0.5-μm-thick c-axis epitaxial Na0.5K0.5NbO3 films on high-resistivity (7.7 Ω cm) silicon SiO2/Si substrate are studied experimentally at frequencies up to 40 GHz. For measurements, planar 0.5-μm-thick gold electrodes (interdigital and straight slot) are photolithography defined on the top surface of Na0.5K0.5NbO3 films. The slot width between the electrodes is 2 or 4 μm. 13% capacitance change at 40 V dc bias and Q factor more than 15 are observed at 40 GHz, which makes the structure useful for applications in electrically tunable millimeter-wave devices

Gevorgian, SDepartment of Microelectronics, Chalmers University of Technology, Gothenburg, Sweden;Core Unit Research Center, Ericsson Microwave Systems, Mölndal, Sweden (författare)
Cho, C.-RDepartment of Condensed Matter Physics, Royal Institute of Technology, Stockholm, Sweden (författare)
Grishin, A.Department of Condensed Matter Physics, Royal Institute of Technology, Stockholm, Sweden (författare)
Andreasson, JohannaLuleå tekniska universitet (författare)
Lindbäck, TureLuleå tekniska universitet(Swepub:ltu)ture (författare)
Department of Microelectronics, Chalmers University of Technology, Gothenburg, SwedenDepartment of Microelectronics, Chalmers University of Technology, Gothenburg, Sweden;Core Unit Research Center, Ericsson Microwave Systems, Mölndal, Sweden (creator_code:org_t)

Ingår i:Applied Physics Letters: AIP Publishing78:13, s. 1900-19020003-69511077-3118

Av författaren/redakt...: Abadei, S.; Gevorgian, S; Cho, C.-R; Grishin, A.; Andreasson, Joha ...; Lindbäck, Ture

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