Sökning: onr:"swepub:oai:DiVA.org:ri-13405" >
Modeling of SiC pow...
Modeling of SiC power modules with double sided cooling
-
- Brinkfeldt, Klas (författare)
- RISE,IVF
-
- Neumaier, Klaus (författare)
- Fairchild Semiconductor GmbH, Germany
-
- Mann, Alexander (författare)
- RISE,IVF
-
visa fler...
-
- Zschieschang, Olaf (författare)
- Fairchild Semiconductor GmbH, Germany
-
- Otto, Alexander (författare)
- Fraunhofer ENAS, Germany
-
- Kaulfersch, Eberhard (författare)
- Berhner Nanotest und DesIgn GmbH, Germany
-
- Edwards, Michael (författare)
- RISE,IVF
-
- Andersson, Dag (författare)
- RISE,IVF
-
visa färre...
-
(creator_code:org_t)
- IEEE Computer Society, 2014
- 2014
- Engelska.
-
Ingår i: 2014 15th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2014. - : IEEE Computer Society. - 9781479947904
- Relaterad länk:
-
http://ieeexplore.ie...
-
visa fler...
-
https://urn.kb.se/re...
-
https://doi.org/10.1...
-
visa färre...
Abstract
Ämnesord
Stäng
- Silicon Carbide (SiC) based transistor devices have demonstrated higher efficiency switching operation compared to silicon-based, state-of-the-art solutions due to the superior electrical and thermal properties of the SiC material. The improved current density and thermal conductivity allows SiC-based power modules to be smaller than their silicon counterparts for comparable current densities. The active chip area can be reduced further by effectively cooling the devices. In this work, a new power module including SiC bipolar junction transistors (BJT) and diodes and integrated double sided cooling will be introduced. The target application of these modules is a new drive-train system for commercial electric vehicles.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Materialteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Materials Engineering (hsv//eng)
Publikations- och innehållstyp
- ref (ämneskategori)
- kon (ämneskategori)
Hitta via bibliotek
Till lärosätets databas