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Competing Mechanism...
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Zhang, YouweiUppsala universitet,Fasta tillståndets elektronik,Fudan Univ, Sch Informat Sci & Technol, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China
(författare)
Competing Mechanisms for Photocurrent Induced at the Monolayer-Multilayer Graphene Junction
- Artikel/kapitelEngelska2018
Förlag, utgivningsår, omfång ...
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2018-05-16
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WILEY-V C H VERLAG GMBH,2018
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Nummerbeteckningar
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LIBRIS-ID:oai:DiVA.org:uu-358687
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https://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-358687URI
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https://doi.org/10.1002/smll.201800691DOI
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Språk:engelska
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Sammanfattning på:engelska
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Ämneskategori:ref swepub-contenttype
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Ämneskategori:art swepub-publicationtype
Anmärkningar
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Graphene is characterized by demonstrated unique properties for potential novel applications in photodetection operated in the frequency range from ultraviolet to terahertz. To date, detailed work on identifying the origin of photoresponse in graphene is still ongoing. Here, scanning photocurrent microscopy to explore the nature of photocurrent generated at the monolayer-multilayer graphene junction is employed. It is found that the contributing photocurrent mechanism relies on the mismatch of the Dirac points between the monolayer and multilayer graphene. For overlapping Dirac points, only photothermoelectric effect (PTE) is observed at the junction. When they do not coincide, a different photocurrent due to photovoltaic effect (PVE) appears and becomes more pronounced with larger separation of the Dirac points. While only PTE is reported for a monolayer-bilayer graphene junction in the literature, this work confirms the coexistence of PTE and PVE, thereby extending the understanding of photocurrent in graphene-based heterojunctions.
Ämnesord och genrebeteckningar
Biuppslag (personer, institutioner, konferenser, titlar ...)
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Zheng, HemeiFudan Univ, Sch Informat Sci & Technol, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China
(författare)
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Wang, QiyuanFudan Univ, Sch Informat Sci & Technol, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China
(författare)
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Cong, ChunxiaoFudan Univ, Sch Informat Sci & Technol, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China
(författare)
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Hu, LaiguiFudan Univ, Sch Informat Sci & Technol, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China
(författare)
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Tian, PengfeiFudan Univ, Sch Informat Sci & Technol, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China
(författare)
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Liu, RanFudan Univ, Sch Informat Sci & Technol, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China
(författare)
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Zhang, Shi-LiUppsala universitet,Fasta tillståndets elektronik(Swepub:uu)shizh725
(författare)
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Qiu, Zhi-JunFudan Univ, Sch Informat Sci & Technol, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China
(författare)
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Uppsala universitetFasta tillståndets elektronik
(creator_code:org_t)
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Ingår i:Small: WILEY-V C H VERLAG GMBH14:241613-68101613-6829
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