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Design and Characte...
Design and Characterization of RF-Power LDMOS Transistors
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- Bengtsson, Olof, 1969- (författare)
- Högskolan i Gävle,Uppsala universitet,Fasta tillståndets elektronik,Ämnesavdelningen för elektronik
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- Olsson, Jörgen, Professor (preses)
- Uppsala universitet,Fasta tillståndets elektronik
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- Vestling, Lars, Dr. (preses)
- Uppsala universitet,Fasta tillståndets elektronik
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Beckman, Claes (preses)
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Tornblad, Olof (opponent)
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(creator_code:org_t)
- ISBN 9789155472696
- Uppsala : Universitetsbiblioteket, 2008
- Engelska 160 s.
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Serie: Digital Comprehensive Summaries of Uppsala Dissertations from the Faculty of Science and Technology, 1651-6214 ; 548
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Abstract
Ämnesord
Stäng
- In mobile communication new applications like wireless internet and mobile video have increased the demand of data-rates. Therefore, new more wideband systems are being implemented. Power amplifiers in the base-stations that simultaneously handle these wideband signals for many terminals (handhelds) need to be highly linear with a considerable band-width. In the past decade LDMOS has been the dominating technology for use in these RF-power amplifiers. In this work LDMOS transistors possible to fabricate in a normal CMOS process have been optimized and analyzed for RF-power applications. Their non-linear behavior has been explored using load-pull measurements. The mechanisms of the non-linear input capacitance have been analyzed using 2D TCAD simulations. The investigation shows that the input capacitance is a large contributor to phase distortion in the transistor. Computational load-pull TCAD methods have been developed for analysis of RF-power devices in high-efficiency operation. Methods have been developed for class-F with harmonic loading and for bias-modulation. Load-pull measurements with drain-bias modulation in a novel measurement setup have also been conducted. The investigation shows that the combination of computational load-pull of physical transistor structures and direct measurement evaluation with modified load-pull is a viable alternative for future design of RF-power devices. Simulations and measurements on the designed LDMOS shows a 10 to 15 % increase in drain efficiency in mid-power range both in simulations and measurements. The computational load-pull method has also been used to investigate the power capability of LDMOS transistors on SOI. This study indicates that either a low-resistivity or high-resistivity substrate should be used in manufacturing of RF-power LDMOS transistors on SOI to achieve optimum efficiency. Based on a proper substrate selection these devices exhibit a 10 % higher drain-efficiency mainly due to lower dissipated power in the devices.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- Power Amplifiers
- LDMOS transistors
- RF-power
- IMD
- Technology CAD
- Load-Pull
- Electronics
- Elektronik
Publikations- och innehållstyp
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- dok (ämneskategori)
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