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Integration of GMR-...
Integration of GMR-based spin torque oscillators and CMOS circuitry
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- Chen, Tingsu (författare)
- KTH,Integrerade komponenter och kretsar
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- Eklund, Anders (författare)
- KTH,Integrerade komponenter och kretsar
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- Redjai Sani, Sohrab (författare)
- KTH,Material- och nanofysik
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- Rodriguez, Saul (författare)
- KTH,Integrerade komponenter och kretsar
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- Malm, B. Gunnar (författare)
- KTH,Integrerade komponenter och kretsar
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- Åkerman, Johan, 1970 (författare)
- KTH,Gothenburg University,Göteborgs universitet,Institutionen för fysik (GU),Department of Physics (GU),Materialfysik, MF,University of Gothenburg, Sweden
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- Rusu, Ana (författare)
- KTH,Integrerade komponenter och kretsar
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(creator_code:org_t)
- Elsevier BV, 2015
- 2015
- Engelska.
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Ingår i: Solid-State Electronics. - : Elsevier BV. - 0038-1101 .- 1879-2405. ; 111, s. 91-99
- Relaterad länk:
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https://gup.ub.gu.se...
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https://doi.org/10.1...
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https://urn.kb.se/re...
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Abstract
Ämnesord
Stäng
- This paper demonstrates the integration of giant magnetoresistance (GMR) spin torque oscillators (STO) with dedicated high frequency CMOS circuits. The wire-bonding-based integration approach is employed in this work, since it allows easy implementation, measurement and replacement. A GMR STO is wire-bonded to the dedicated CMOS integrated circuit (IC) mounted on a PCB, forming a (GMR STO + CMOS IC) pair. The GMR STO has a lateral size of 70 nm and more than an octave of tunability in the microwave frequency range. The proposed CMOS IC provides the necessary bias-tee for the GMR STO, as well as electrostatic discharge (ESD) protection and wideband amplification targeting high frequency GMR STO-based applications. It is implemented in a 65 nm CMOS process, offers a measured gain of 12 dB, while consuming only 14.3 mW and taking a total silicon area of 0.329 mm(2). The measurement results show that the (GMR STO + CMOS IC) pair has a wide tunability range from 8 GHz to 16.5 GHz and improves the output power of the GMR STO by about 10 dB. This GMR STO-CMOS integration eliminates wave reflections during the signal transmission and therefore exhibits good potential for developing high frequency GMR STO-based applications, which combine the features of CMOS and STO technologies. (C) 2015 Elsevier Ltd. All rights reserved.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- CMOS
- Giant magnetoresistance
- Integration
- On-chip bias-tee
- Spin torque oscillator
- Wire bonding
- FIELD
- Engineering
- Electrical & Electronic
- Physics
- Applied
- Physics
- Condensed Matter
- CMOS
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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