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Facet-selective gro...
Facet-selective group-III incorporation in InGaAs template assisted selective epitaxy
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- Borg, Mattias (författare)
- Lund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Nanoelektronik,Forskargrupper vid Lunds universitet,Other operations, LTH,Faculty of Engineering, LTH,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH,Nano Electronics,Lund University Research Groups
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- Gignac, Lynne (författare)
- IBM Thomas J. Watson Research Center
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- Bruley, John (författare)
- IBM Thomas J. Watson Research Center
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- Malmgren, Andreas (författare)
- Lund University
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- Sant, Saurabh (författare)
- IBM Research Zurich
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- Convertino, Clarissa (författare)
- IBM Research Zurich
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- Rossell, Marta D. (författare)
- IBM Research Zurich,Swiss Federal Laboratories for Materials Science and Technology
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- Sousa, Marilyne (författare)
- IBM Research Zurich
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- Breslin, Chris (författare)
- IBM Research Zurich
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- Riel, Heike (författare)
- IBM Research Zurich
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- Moselund, Kirsten E. (författare)
- IBM Research Zurich
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- Schmid, Heinz (författare)
- IBM Research Zurich
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(creator_code:org_t)
- 2018-12-31
- 2019
- Engelska.
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Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 30:8
- Relaterad länk:
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http://dx.doi.org/10... (free)
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https://doi.org/10.1...
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https://lup.lub.lu.s...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- InGaAs is a potential candidate for Si replacement in upcoming advanced technological nodes because of its excellent electron transport properties and relatively low interface defect density in dielectric gate stacks. Therefore, integrating InGaAs devices with the established Si platforms is highly important. Using template-assisted selective epitaxy (TASE), InGaAs nanowires can be monolithically integrated with high crystal quality, although the mechanisms of group III incorporation in this ternary material have not been thoroughly investigated. Here we present a detailed study of the compositional variations of InGaAs nanostructures epitaxially grown on Si(111) and Silicon-on-insulator substrates by TASE. We present a combination of XRD data and detailed EELS maps and find that the final Ga/In chemical composition depends strongly on both growth parameters and the growth facet type, leading to complex compositional sub-structures throughout the crystals. We can further conclude that the composition is governed by the facet-dependent chemical reaction rates at low temperature and low V/III ratio, while at higher temperature and V/III ratio, the incorporation is transport limited. In this case we see indications that the transport is a competition between Knudsen flow and surface diffusion.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology -- Nano-technology (hsv//eng)
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Till lärosätets databas
- Av författaren/redakt...
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Borg, Mattias
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Gignac, Lynne
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Bruley, John
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Malmgren, Andrea ...
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Sant, Saurabh
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Convertino, Clar ...
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visa fler...
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Rossell, Marta D ...
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Sousa, Marilyne
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Breslin, Chris
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Riel, Heike
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Moselund, Kirste ...
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Schmid, Heinz
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visa färre...
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- TEKNIK OCH TEKNOLOGIER
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TEKNIK OCH TEKNO ...
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och Nanoteknik
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och Nanoteknik
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Nanotechnology
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Lunds universitet