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The impact of heter...
The impact of hetero-junction and oxide-interface traps on the performance of InAs/Si and InAs/GaAsSb nanowire tunnel FETs
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- Schenk, A. (författare)
- ETH Zürich
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- Sant, S. (författare)
- ETH Zürich
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- Moselund, K. (författare)
- IBM Research Zurich
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- Riel, H. (författare)
- IBM Research Zurich
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- Memisevic, E. (författare)
- Lund University,Lunds universitet,Nanoelektronik,Forskargrupper vid Lunds universitet,Nano Electronics,Lund University Research Groups
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- Wernersson, L. E. (författare)
- Lund University,Lunds universitet,Nanoelektronik,Forskargrupper vid Lunds universitet,Nano Electronics,Lund University Research Groups
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(creator_code:org_t)
- 2017
- 2017
- Engelska 4 s.
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Ingår i: 2017 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2017. - 9784863486102 ; 2017-September, s. 273-276
- Relaterad länk:
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http://dx.doi.org/10...
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https://lup.lub.lu.s...
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https://doi.org/10.2...
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Abstract
Ämnesord
Stäng
- Fabricated InAs/Si and InAs/GaAsSb vertical nanowire tunnel FETs are analyzed by physics-based TCAD with emphasis on the impact of hetero-junction and oxide-interface traps on their performance. After careful fitting of a minimum set of parameters, the effects of diameter scaling and gate alignment are predicted. Trap-assisted tunneling at the oxide interface is suppressed by scaling the diameter into the volume-inversion regime. Gate alignment steepens the slope and increases the ON-current. The 'trap-tolerant' device geometry can result in a small sub-threshold swing despite commonly present trap concentrations.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology -- Nano-technology (hsv//eng)
Nyckelord
- nanowire TFETs
- sub-thermal slope
- TCAD
- trap- A ssisted tunneling
Publikations- och innehållstyp
- kon (ämneskategori)
- ref (ämneskategori)
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