A Class-AB 1.65GHz-2GHz Broadband CMOS Medium Power Amplifier

• In this paper a single stage broadband CMOS RF power amplifier is presented. The power amplifier is fabricated in a 0:25¹m CMOS process. Measurements with a 2:5V supply voltage show an output power of 18:5 dBm with an associated PAE of 16% at the 1-dB compression point. The measured gain is 5.1 § 0:5 dB from 1.65 to 2 GHz. Simulated and measured results agree reasonably well.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Publikations- och innehållstyp

kon (ämneskategori)

ref (ämneskategori)