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InAs/GaAs p-i-p qua...
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Park, M. S.Korea Institute of Science and Technology, South Korea,Center for Optoelectronic Convergence Systems, KIST (Korean Institute of Science and Technology), Seoul, Republic of Korea
(författare)
InAs/GaAs p-i-p quantum dots-in-a-well infrared photodetectors operating beyond 200 K
- Artikel/kapitelEngelska2014
Förlag, utgivningsår, omfång ...
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2014-11
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Stevenage, United Kingdom :Institution of Engineering and Technology (IET),2014
Nummerbeteckningar
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LIBRIS-ID:oai:lup.lub.lu.se:d74250cb-28f9-4e6c-b278-fe0a521f1d6a
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https://lup.lub.lu.se/record/4865218URI
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https://doi.org/10.1049/el.2014.2437DOI
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https://urn.kb.se/resolve?urn=urn:nbn:se:ri:diva-31940URI
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https://urn.kb.se/resolve?urn=urn:nbn:se:hh:diva-27516URI
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Språk:engelska
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Sammanfattning på:engelska
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Ämneskategori:art swepub-publicationtype
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Ämneskategori:ref swepub-contenttype
Anmärkningar
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High-temperature operating performance of p-i-p quantum dots-in-awell infrared photodetectors (QDIPs) is successfully demonstrated. The optically active region consists of 10 layers of p-doped selfassembled InAs quantum dots (QDs) asymmetrically positioned in In0.15Ga0.85As quantum wells (QWs). The dark current is suppressed by an incorporated superlattice (SL) structure composed of 10 pairs of AlGaAs/GaAs heterostructure. The very low recorded dark current makes the fabricated p-i-p QDIPs suitable for high-temperature operation. The measured photoresponse reveals broad mid-wave infrared (MWIR) detection up to 200 K.
Ämnesord och genrebeteckningar
Biuppslag (personer, institutioner, konferenser, titlar ...)
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Jain, VishalHögskolan i Halmstad,Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH,Halmstad University, Sweden; Lund University, Sweden,Tillämpad matematik och fysik (MPE-lab),Lund Univ, Solid State Phys & Nanometer Struct Consortium, Lund, Sweden,Nanovetenskap(Swepub:hh)visjai
(författare)
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Lee, E. H.Korea Institute of Science and Technology, South Korea,Center for Optoelectronic Convergence Systems, KIST (Korean Institute of Science and Technology), Seoul, Republic of Korea
(författare)
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Kim, S. H.Korea Institute of Science and Technology, South Korea,Center for Optoelectronic Convergence Systems, KIST (Korean Institute of Science and Technology), Seoul, Republic of Korea
(författare)
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Pettersson, HåkanHögskolan i Halmstad,Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH,Halmstad University, Sweden; Lund University, Sweden,Tillämpad matematik och fysik (MPE-lab),Lund Univ, Solid State Phys & Nanometer Struct Consortium, Lund, Sweden(Swepub:hh)hape
(författare)
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Wang, Q.RISE,Acreo,Acreo Swedish ICT AB, Electrum Lab Nano & Microtechnol Fab, Kista, Sweden
(författare)
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Song, J. D.Korea Institute of Science and Technology, South Korea,Center for Optoelectronic Convergence Systems, KIST (Korean Institute of Science and Technology), Seoul, Republic of Korea
(författare)
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Choi, W. J.Korea Institute of Science and Technology, South Korea,Center for Optoelectronic Convergence Systems, KIST (Korean Institute of Science and Technology), Seoul, Republic of Korea
(författare)
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Korea Institute of Science and Technology, South KoreaCenter for Optoelectronic Convergence Systems, KIST (Korean Institute of Science and Technology), Seoul, Republic of Korea
(creator_code:org_t)
Sammanhörande titlar
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Ingår i:Electronics LettersStevenage, United Kingdom : Institution of Engineering and Technology (IET)50:23, s. 1731-17321350-911X0013-5194
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