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Realization of a re...
Realization of a resonant tunneling permeable base transistor with optimized overgrown GaAs interfaces
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- Lind, Erik (författare)
- Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Faculty of Engineering, LTH
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- Wernersson, Lars-Erik (författare)
- Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Faculty of Engineering, LTH
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Pietzonka, Ines (författare)
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visa fler...
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- Seifert, Werner (författare)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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visa färre...
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(creator_code:org_t)
- 2002
- 2002
- Engelska.
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Ingår i: IEEE Transactions on Electron Devices. - 0018-9383. ; 49:6, s. 1066-1069
- Relaterad länk:
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https://lup.lub.lu.s...
Abstract
Ämnesord
Stäng
- A resonant tunneling permeable base transistor has been realized experimentally by overgrowing a tungsten grating placed in direct vicinity to a double barrier heterostructure. In this way, we can directly modulate the tunneling current via an embedded gate. Since the quality of the overgrown interface is critical, special attention is paid to this issue, and the effect of different wet etchants prior to overgrowth is studied both by electrical measurements and by the use of an atomic force microscope. A clear dependence of the electrical properties and the crystal quality on the etchants used is found. This is a key result for the realization of our resonant tunneling device.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Nyckelord
- resonant tunneling
- field-effect transistors
- gallium arsenide
- transistors
- surface cleaning
- tungsten
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