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Highly tensile-stra...
Highly tensile-strained sub-monolayer Ge nanostructure on GaSb studied by scanning tunneling microscopy
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- Li, Y. (författare)
- Chinese Academy of Sciences,Shanghai University
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- Song, Y. X. (författare)
- Chinese Academy of Sciences
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- Zhang, Z. P. (författare)
- ShanghaiTech University,Chinese Academy of Sciences
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- Chen, Q. M. (författare)
- Chinese Academy of Sciences
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- F.X.Zha, (författare)
- Shanghai University
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- Wang, Shu Min, 1963 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- 2017-04-24
- 2017
- Engelska.
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Ingår i: Materials Research Express. - : IOP Publishing. - 2053-1591. ; 4:4, s. Article nr 045907 -
- Relaterad länk:
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https://doi.org/10.1...
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https://research.cha...
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Abstract
Ämnesord
Stäng
- Highly tensile-strained sub-monolayer Ge nanostructures on GaSb have been grown by molecular beam epitaxy and studied by ultrahigh-vacuum scanning tunneling microscopy. Four different coverage rates of Ge nanostructures on GaSb are achieved and investigated. It is found the growth of Ge on GaSb follows 2D growth mode. The crystal lattice of the sub-monolayer Ge nanostructures is coherent with that of the GaSb, inferring as large as 7.74% tensile strain in the Ge nanostructures.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology (hsv//eng)
Nyckelord
- nanostructure
- tensile-strained Ge
- scanning tunneling microscopy
Publikations- och innehållstyp
- art (ämneskategori)
- ref (ämneskategori)
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