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As3d core level stu...
As3d core level studies of (GaMn)As annealed under As capping
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- Ulfat, Intikhab, 1966 (författare)
- Lund University,Lunds universitet,MAX IV-laboratoriet,MAX IV Laboratory
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- Adell, Johan, 1980 (författare)
- Lund University,Lunds universitet,MAX IV-laboratoriet,MAX IV Laboratory
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- Sadowski, J. (författare)
- Lunds universitet,Lund University,Polish Academy of Sciences
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- Ilver, Lars, 1949 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Kanski, Janusz, 1946 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- Elsevier BV, 2010
- 2010
- Engelska.
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Ingår i: Surface Science. - : Elsevier BV. - 0039-6028. ; 604:2, s. 125-128
- Relaterad länk:
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http://dx.doi.org/10...
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https://doi.org/10.1...
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https://research.cha...
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https://lup.lub.lu.s...
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Abstract
Ämnesord
Stäng
- The surface of a Ga(0.95)Mn(0.05)As layer subjected to low temperature annealing under As capping has been studied by core level photoemission with focus on As3d spectrum. By detailed comparison with the surface of pure GaAs subjected to the same surface treatment, the As spectral component of the reacted surface layer has been identified. The relative intensity of this component is consistent with the notion of an MnAs monolayer terminating the annealed (GaMn)As surface.
Ämnesord
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Nyckelord
- Core level photoemission
- As3d spectrum
- Post-growth annealing
- (GaMn)As
- Post-growth annealing
- (GaMn)As
- Core level photoemission
- As3d spectrum
Publikations- och innehållstyp
- art (ämneskategori)
- ref (ämneskategori)
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