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InP DHBT wideband a...
InP DHBT wideband amplifiers with up to 235 GHz bandwidth
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- Eriksson, Klas, 1983 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Darwazeh, I.Z. (författare)
- University College London (UCL)
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- Zirath, Herbert, 1955 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- ISBN 9781479938698
- 2014
- 2014
- Engelska.
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Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781479938698 ; , s. Art. no. 6848436-
- Relaterad länk:
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Two wideband amplifier MMICs are designed and tested. Both designs employ InP double-heterojunction bipolar transistor technology. The amplifiers are designed using cascode cells, in a distributed amplifier topology, with simple on-chip resistive bias circuitry. A single stage design achieves 7.5 dB gain and 192 GHz bandwidth and a 2-cascaded distributed amplifier achieves gain in excess of 16 dB and with bandwidth exceeding 235 GHz, thus being the widest band amplifiers reported to date.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- distributed amplifiers
- DHBT
- Wideband amplifiers
- InP
- CSSDA
Publikations- och innehållstyp
- kon (ämneskategori)
- ref (ämneskategori)
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