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Ultralow 1/f noise ...
Ultralow 1/f noise in epigraphene devices
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- Shetty, Naveen, 1988 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Chianese, Federico, 1989 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- He, Hans, 1989 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology,RISE Research Institutes of Sweden
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- Huhtasaari, Johanna, 1999 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Ghasemi, S. (författare)
- Universitat Politecnica de Catalunya,Polytechnic University of Catalonia
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- Moth-Poulsen, Kasper, 1978 (författare)
- Institucio Catalana de Recerca i Estudis Avancats (ICREA),Catalan Institution for Research and Advanced Studies (ICREA),Universitat Politecnica de Catalunya,Polytechnic University of Catalonia,Chalmers tekniska högskola,Chalmers University of Technology,Institut de Ciència de Materials de Barcelona (ICMAB-CSIC),Institute of Material Science of Barcelona (ICMAB)
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- Kubatkin, Sergey, 1959 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Bauch, Thilo, 1972 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Lara Avila, Samuel, 1983 (författare)
- National Physical Laboratory (NPL),Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- 2024
- 2024
- Engelska.
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Ingår i: Applied Physics Letters. - 0003-6951 .- 1077-3118. ; 124:9
- Relaterad länk:
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https://research.cha... (primary) (free)
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https://research.cha...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- We report the lowest recorded levels of 1/ f noise for graphene-based devices, at the level of S V / V 2 = S I / I 2 = 4.4 × 10 − 16 (1/Hz), measured at f = 10 Hz ( S V / V 2 = S I / I 2 < 10 − 16 1/Hz for f > 100 Hz) in large-area epitaxial graphene on silicon carbide (epigraphene) Hall sensors. This performance is made possible through the combination of high material quality, low contact resistance achieved by edge contact fabrication process, homogeneous doping, and stable passivation of the graphene layer. Our study explores the nature of 1/ f noise as a function of carrier density and device geometry and includes data from Hall sensors with device area range spanning over six orders of magnitude, with characteristic device length ranging from L = 1 μm to 1 mm. In optimized graphene Hall sensors, we demonstrate arrays to be a viable route to improve further the magnetic field detection: a simple parallel connection of two devices displays record-high magnetic field sensitivity at room temperature, with minimum detectable magnetic field levels down to B min = 9.5 nT/√Hz. The remarkable low levels of 1/ f noise observed in epigraphene devices hold immense capacity for the design and fabrication of scalable epigraphene-based sensors with exceptional performance.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
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Till lärosätets databas
- Av författaren/redakt...
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Shetty, Naveen, ...
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Chianese, Federi ...
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He, Hans, 1989
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Huhtasaari, Joha ...
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Ghasemi, S.
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Moth-Poulsen, Ka ...
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visa fler...
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Kubatkin, Sergey ...
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Bauch, Thilo, 19 ...
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Lara Avila, Samu ...
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visa färre...
- Om ämnet
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- TEKNIK OCH TEKNOLOGIER
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TEKNIK OCH TEKNO ...
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och Elektroteknik oc ...
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och Annan elektrotek ...
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- NATURVETENSKAP
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NATURVETENSKAP
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och Fysik
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och Den kondenserade ...
- Artiklar i publikationen
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Applied Physics ...
- Av lärosätet
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Chalmers tekniska högskola