Sökning: onr:"swepub:oai:research.chalmers.se:62db8527-30fa-4703-89cd-5e453d9bc6d5" >
S-band discrete and...
S-band discrete and MMIC GaN power amplifiers
-
- Nilsson, Joakim (författare)
- Saab AB,Saab
-
- Billström, Niklas (författare)
- Saab AB,Saab
-
- Rorsman, Niklas, 1964 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
-
visa fler...
-
- Romanini, Paolo (författare)
- SELEX Sistemi integrati
-
visa färre...
-
(creator_code:org_t)
- ISBN 9782874870125
- 2009
- 2009
- Engelska.
-
Ingår i: European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 39th European Microwave Conference, EuMC 2009. - 9782874870125 ; , s. 495-498
- Relaterad länk:
-
https://research.cha...
Abstract
Ämnesord
Stäng
- The use of GaN devices for microwave power amplifiers begins to be a reality in Europe. This paper describes two S-band (2.7-3.3 GHz) high power amplifier (HPA) designs; one discrete 100 W output stage and one 10 W MMIC power amplifier. The discrete power amplifier is designed using two GaN power bars with a total gate width of 19.2 mm. The GaN power bars have been developed by Selex-SI, within the european co-project Korrigan. The MMIC power amplifier was designed using a 0.25 ?m GaN HEMT process supplied and processed by Chalmers.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Publikations- och innehållstyp
- kon (ämneskategori)
- ref (ämneskategori)
Hitta via bibliotek
Till lärosätets databas