A highly integrated chipset for 40 Gbps wireless D-band communication based on a 250 nm InP DHBT technology

Carpenter, Sona,1983Chalmers tekniska högskola,Chalmers University of Technology (författare)

A highly integrated chipset comprising a transmitter (TX) and a receiver (RX) chip, based on a 250 nm InP DHBT technology for high data rate D-band (110-170 GHz) wireless communication is described. The chipset is designed for point-to-point wireless communication for 4G and 5G mobile communication infrastructure, high data rate backhaul, low-latency wireless HDTV transmission and >40 Gbps transmission over dielectric waveguide. The measured RX conversion gain is 26 dB, with a noise figure of 9 dB. The measured TX conversion gain is 20 dB. A maximum QPSK data rate of 44 Gbps is demonstrated, which exceeds the present state-of-the art in the D-band by a factor of 2.

He, Zhongxia Simon,1984Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)zhongxia (författare)
Bao, M.Telefonaktiebolaget L M Ericsson,Ericsson (författare)
Zirath, Herbert,1955Chalmers tekniska högskola,Chalmers University of Technology(Swepub:cth)zirath (författare)
Chalmers tekniska högskolaTelefonaktiebolaget L M Ericsson (creator_code:org_t)

Ingår i:Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC1550-87819781479936229

Av författaren/redakt...: Carpenter, Sona, ...; He, Zhongxia Sim ...; Bao, M.; Zirath, Herbert, ...

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