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Symmetrical modelin...
Symmetrical modeling of GaN HEMTS
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- Prasad, Ankur, 1987 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology,Chalmers University of Technology, Sweden
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- Fager, Christian, 1974 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology,Chalmers University of Technology, Sweden
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- Thorsell, Mattias, 1982 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology,Chalmers University of Technology, Sweden
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- Andersson, Christer, 1982 (författare)
- Mitsubishi Electric Corporation
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- Yhland, Klas, 1964 (författare)
- RISE,SP Sveriges Tekniska Forskningsinstitut AB,Chalmers tekniska högskola,Chalmers University of Technology,Kommunikation,Chalmers University of Technology, Sweden
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- Andersson, Cristina M. (författare)
- Mitsubishi, Japan
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(creator_code:org_t)
- ISBN 9781479936229
- 2014
- 2014
- Engelska.
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Ingår i: Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC. - 1550-8781. - 9781479936229
- Relaterad länk:
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http://dx.doi.org/10...
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https://research.cha...
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https://doi.org/10.1...
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https://urn.kb.se/re...
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Abstract
Ämnesord
Stäng
- This paper presents a symmetrical small signal model for GaN HEMTs valid for both positive and negative Vds. The model takes advantage of the intrinsic symmetry of the devices typically used for switches. The parameters of the model are extracted using a new symmetrical optimization based extraction method, optimizing simultaneously for both positive and negative drain-source bias points. This ensures a symmetrical small signal model with lower modeling error. The small signal model can be further used to simplify the development of a large-signal model. The small signal model is validated with measured S- parameters of a commercial GaN HEMT.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- Semiconductor device modeling
- Parameters extraction
- Gallium Nitride
- Modeling
- HEMTs
Publikations- och innehållstyp
- kon (ämneskategori)
- ref (ämneskategori)
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