Sökning: onr:"swepub:oai:research.chalmers.se:f96e84a9-fbaf-4768-a956-906eab65046c" >
Impact of in situ N...
-
Ding Yuan, Chen,1991Chalmers University of Technology,SweGaN AB, Linkoping, Sweden; Chalmers Univ Technol, Sweden
(författare)
Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance
- Artikel/kapitelEngelska2022
Förlag, utgivningsår, omfång ...
-
2022-01-25
-
IOP Publishing,2022
Nummerbeteckningar
-
LIBRIS-ID:oai:research.chalmers.se:f96e84a9-fbaf-4768-a956-906eab65046c
-
https://doi.org/10.1088/1361-6641/ac4b17DOI
-
https://research.chalmers.se/publication/528518URI
-
https://lup.lub.lu.se/record/6cabd4e6-8325-46c2-8f7d-df3640d2ca82URI
-
https://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-182761URI
Kompletterande språkuppgifter
-
Språk:engelska
-
Sammanfattning på:engelska
Ingår i deldatabas
Klassifikation
-
Ämneskategori:art swepub-publicationtype
-
Ämneskategori:ref swepub-contenttype
Anmärkningar
-
Funding Agencies|Swedish Governmental Agency for Innovation Systems (VINNOVA)Vinnova [2016-05190]; Linkoping University; Chalmers University; ABB; Epiluvac; EricssonEricsson; FMV; Gotmic; ON Semiconductor; Saab AB; SweGaN; United Monolithic Semiconductors (UMS); VINNOVAVinnova [2017-04870]; Swedish Research Council VRSwedish Research Council [2016-00889]; Swedish Foundation for Strategic Research (SSF)Swedish Foundation for Strategic Research [EM16-0024, STP19-0008]; European Unions Horizon 2020 research and innovation program [823260]; Knut and Alice Wallenberg foundationKnut & Alice Wallenberg Foundation
-
The impact on the performance of GaN high electron mobility transistors (HEMTs) of in situ ammonia (NH3) pre-treatment prior to the deposition of silicon nitride (SiN) passivation with low-pressure chemical vapor deposition (LPCVD ) is investigated. Three different NH3 pre-treatment durations (0, 3, and 10 min) were compared in terms of interface properties and device performance. A reduction of oxygen (O) at the interface between SiN and epi-structure is detected by scanning transmission electron microscopy (STEM )-electron energy loss spectroscopy (EELS) measurements in the sample subjected to 10 min of pre-treatment. The samples subjected to NH3 pre-treatment show a reduced surface-related current dispersion of 9% (compared to 16% for the untreated sample), which is attributed to the reduction of O at the SiN/epi interface. Furthermore, NH3 pre-treatment for 10 min significantly improves the current dispersion uniformity from 14.5% to 1.9%. The reduced trapping effects result in a high output power of 3.4 W mm(-1) at 3 GHz (compared to 2.6 W mm(-1) for the untreated sample). These results demonstrate that the in situ NH3 pre-treatment before LPCVD of SiN passivation is critical and can effectively improves the large-signal microwave performance of GaN HEMTs.
Ämnesord och genrebeteckningar
Biuppslag (personer, institutioner, konferenser, titlar ...)
-
Persson, AxelLinköpings universitet,Linköping University,Tunnfilmsfysik,Tekniska fakulteten(Swepub:liu)perpe25
(författare)
-
Wen, Kai-Hsin,1994Chalmers University of Technology,SweGaN AB, Linkoping, Sweden; Chalmers Univ Technol, Sweden(Swepub:cth)kaihsin
(författare)
-
Sommer, DanielUnited Monolithic Semiconductors (UMS),United Monolithic Semiconductors GmbH,United Monolith Semicond GmbH, Germany
(författare)
-
Grunenputt, JanUnited Monolithic Semiconductors (UMS),United Monolithic Semiconductors GmbH,United Monolith Semicond GmbH, Germany
(författare)
-
Blanck, HerveUnited Monolithic Semiconductors (UMS),United Monolithic Semiconductors GmbH,United Monolith Semicond GmbH, Germany
(författare)
-
Thorsell, Mattias,1982Chalmers University of Technology,Chalmers Univ Technol, Sweden(Swepub:cth)thorsell
(författare)
-
Kordina, OlofSweGaN AB, Linkoping, Sweden
(författare)
-
Darakchieva, VanyaLinköpings universitet,Linköping University,Lund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,LTH profilområde: Nanovetenskap och halvledarteknologi,LTH profilområden,Other operations, LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH,LTH Profile Area: Nanoscience and Semiconductor Technology,LTH Profile areas,Faculty of Engineering, LTH,Halvledarmaterial,Tekniska fakulteten,Lund Univ, Sweden; Lund Univ, Sweden(Swepub:liu)vanda79
(författare)
-
Persson, Per O. A.Linköping University
(författare)
-
Chen, Jr-TaiSweGaN AB, Linkoping, Sweden
(författare)
-
Rorsman, Niklas,1964Chalmers University of Technology,Chalmers Univ Technol, Sweden(Swepub:cth)rorsman
(författare)
-
Chalmers University of TechnologySweGaN AB, Linkoping, Sweden; Chalmers Univ Technol, Sweden
(creator_code:org_t)
Sammanhörande titlar
-
Ingår i:Semiconductor Science and Technology: IOP Publishing37:31361-66410268-1242
Internetlänk
Hitta via bibliotek
Till lärosätets databas
- Av författaren/redakt...
-
Ding Yuan, Chen, ...
-
Persson, Axel
-
Wen, Kai-Hsin, 1 ...
-
Sommer, Daniel
-
Grunenputt, Jan
-
Blanck, Herve
-
visa fler...
-
Thorsell, Mattia ...
-
Kordina, Olof
-
Darakchieva, Van ...
-
Persson, Per O. ...
-
Chen, Jr-Tai
-
Rorsman, Niklas, ...
-
visa färre...
- Om ämnet
-
- TEKNIK OCH TEKNOLOGIER
-
TEKNIK OCH TEKNO ...
-
och Medicinteknik
-
och Medicinsk appara ...
-
- NATURVETENSKAP
-
NATURVETENSKAP
-
och Kemi
-
och Materialkemi
-
- NATURVETENSKAP
-
NATURVETENSKAP
-
och Fysik
-
och Den kondenserade ...
-
- NATURVETENSKAP
-
NATURVETENSKAP
-
och Fysik
-
och Annan fysik
- Artiklar i publikationen
-
Semiconductor Sc ...
- Av lärosätet
-
Chalmers tekniska högskola
-
Lunds universitet
-
Linköpings universitet