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Sökning: L773:9780819499028

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1.
  • Kataria, Himanshu, et al. (författare)
  • High quality large area ELOG InP on silicon for photonic integration using conventional optical lithography
  • 2014
  • Ingår i: SMART PHOTONIC AND OPTOELECTRONIC INTEGRATED CIRCUITS XVI. - : SPIE. - 9780819499028 ; , s. 898904-
  • Konferensbidrag (refereegranskat)abstract
    • A simple method of growing large areas of InP on Si through Epitaxial Lateral Overgrowth (ELOG) is presented. Isolated areas of high quality InP suitable for photonic integration are grown in deeply etched SiO2 mask fabricated using conventional optical lithography and reactive ion etching. This method is particularly attractive for monolithically integrating laser sources grown on InP with Si/SiO2 waveguide structure as the mask. The high optical quality of multi quantum well (MQW) layers grown on the ELOG layer is promisingly supportive of the feasibility of this method for mass production.
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2.
  • Yu, Longhai, et al. (författare)
  • Observation of optically induced transparency effect in silicon nanophotonic wires with graphene
  • 2014
  • Ingår i: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. - 9780819499028
  • Konferensbidrag (refereegranskat)abstract
    • Graphene, a well-known two-dimensional sheet of carbon atoms in a honeycomb structure, has many unique and fascinating properties in optoelectronics and photonics. Integration of graphene on silicon nanophotonic wires is a promising approach to enhance light-graphene interactions. In this paper, we demonstrate on-chip silicon nanophotonic wires covered by graphene with CMOS-compatible fabrication processes. Under the illumination of pump light on the graphene sheet, a loss reduction of silicon nanophotonic wires, which is called optically induced transparency (OIT) effect, is observed over a broad wavelength range for the first time. The pump power required to generate the OIT effect is as low as ~0.1mW and the corresponding power density is about 2×10 3mW/cm2, which is significantly different from the saturated absorption effect of graphene reported previously. The extremely low power density implies a new mechanism for the present OIT effect, which will be beneficial to realize silicon on-chip all-optical controlling in the future. It also suggests a new and efficient approach to tune the carrier concentration (doping level) in graphene optically.
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Lourdudoss, Sebastia ... (1)
He, Sailing (1)
Zhang, Chong (1)
Dai, Daoxin (1)
Kataria, Himanshu (1)
Junesand, Carl (1)
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Metaferia, Wondwosen ... (1)
Bowers, John E. (1)
Yu, Longhai (1)
Zheng, Jiajiu (1)
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