| 1. |
- Bao, Mingquang, 1962, et al.
(författare)
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A 100-145 GHz Area-Efficient Power Amplifier in a 130 nm SiGe Technology
- 2017
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Ingår i: European Microwave Integrated Circuits Conference - Proceedings. - 9782874870484 ; 2017-January, s. 277-280
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Konferensbidrag (refereegranskat)abstract
- A 6-stage, 8-way combining power amplifier (PA) in a 130 nm SiGe BiCMOS technology is designed and measured. This PA has an output power of 12.5 - 15.5 dBm in a frequency range from 100 GHz to 145 GHz, when the input power is about 2 dBm. The small signal gain is 19 dB and the maximum DC power consumption is 480 mW with a supply voltage of 1.87 V. The peak power added efficiency (PAE) is 6.4% in D-band. T-junctions are utilized to combine and divide millimeter-wave power. To reduce the PA's loss and chip area, neither a Wilkinson power combiner/divider nor a balun is applied. The chip size is 0.53 mm(2) (0.26 mm(2) without pads).
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| 2. |
- Giannakopoulos, Stavros, 1989, et al.
(författare)
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Ultra-broadband common collector-cascode 4-cell distributed amplifier in 250nm InP HBT technology with over 200 GHz bandwidth
- 2017
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Ingår i: Microwave Integrated Circuits Conference (EuMIC), 2017 12th European. - 9782874870484 ; 2017-January
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Konferensbidrag (refereegranskat)abstract
- An ultra broadband MMIC amplifier is designed using InP double-heterojunction bipolar transistors and its on-chip measurements are reported. The multi-cell distributed amplifier uses four gain cells where each consists of a common collector input stage followed by a cascode gain stage. The chip includes bias, decoupling and terminating circuits for the dc and RF interconnects; it measures 0.72 mm by 0.4 mm. It consumes 210 mW of power and can deliver up to 5.5 dBm of output power at 195 GHz. The amplifier achieves an average gain of 13.5 dB with an overall bandwidth over 200 GHz and a ± 2 dB gain ripple. The measurements indicate that this is the widest band dc-coupled amplifier reported to date and has the highest bandwidth reported among non-cascaded distributed amplifiers.
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| 3. |
- Seyedhosseinzadeh, Neda, et al.
(författare)
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A 100–140 GHz SiGe-BiCMOS sub-harmonic down-converter mixer
- 2017
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Ingår i: 2017 12th European Microwave Integrated Circuits Conference (EuMIC). - 9782874870484 ; 2017-January
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Konferensbidrag (refereegranskat)abstract
- This paper demonstrates a wideband, subharmonic down converting mixer using a commercial 130-nm SiGe-BiCMOS technology. The mixer adopts a frequency doubling LO-stage, a differential switched-transconductance RF-stage, on-chip LO and RF baluns, and two emitter-follower buffer-stages. The measured results exhibit a maximum conversion gain up to 2.6 dB over the frequency range of 100 to 140 GHz with a LO power of 5 dBm. The mixer achieves an input referred 1-dB compression point of −7.2 dBm, with a DC power of 46.3 mW, including 26.7 mW for buffer-stages. It demonstrates also up to 12 GHz 3-dB IF bandwidth, which to the authors' best knowledge, is the highest obtained among active sub-harmonic mixers operating above 100 GHz. The chip occupies 0.4 mm2, including pads.
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| 4. |
- Thanh, Thi Ngoc Do, 1984, et al.
(författare)
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7-13 GHz MMIC GaN HEMT Voltage-Controlled-Oscillators (VCOs) for Satellite Applications
- 2017
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Ingår i: 2017 12TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC). - 9782874870484 ; 2017-January, s. 220-223
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Konferensbidrag (refereegranskat)abstract
- This paper reports on a Voltage-Controlled-Oscillator (VCO) chip set covering 7-13 GHz with phase noise better than -125 dBc/Hz at 1 MHz off-set. The chip set is implemented in GaN HEMT MMIC technology and designed for use in satellite transponders. 6 VCOs are used to cover the full range, each of them has tuning range about 1 GHz with output power in the order of 5 dBm. GaN HEMT technology is chosen for good radiation hardness and for the high power capability, enabling high signal-to-noise ratio and good far-carrier phase noise performance which is needed in future wideband communication systems.
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