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- Aniktar, H, et al.
(author)
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850/900/1800/1900MHz Quad-Band CMOS Medium Power Amplifier
- 2006
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In: Proceedings of European Microwave Week 2006. ; , s. 403-406
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Conference paper (peer-reviewed)abstract
- This paper presents a two-stage quad-band CMOS RF power amplifier. The power amplifier is fabricated in a 0.25 mum CMOS process. The measured 1-dB compression point between 800 and 900 MHz is 15 dBm plusmn 0.2 dB with maximum 18% PAE, and between 1800 and 1900MHz is 17.5dBm plusmn 0.7dB with maximum 17% PAE. The measured gains in the two bands are 23.6 dB plusmn 0.7 dB and 13 dB plusmn 2.1 dB, respectively.
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