| 1. |
- Rabkowski, Jacek, et al.
(författare)
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Evaluation of the drive circuit for a dual gate trench SiC JFET
- 2013
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Ingår i: SILICON CARBIDE AND RELATED MATERIALS 2012. - : Trans Tech Publications Ltd.. - 9783037856246 ; , s. 946-949
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Konferensbidrag (refereegranskat)abstract
- The paper discusses the switching performance of the dual gate trench SiC JFET. In applications such as dc/dc converters, when fast switching is expected the standard totem-pole driver is not sufficient. The reason for this is that both the internal resistance and the parasitic capacitances of this device are significantly higher than for other designs. Instead, the gate driver with a dynamic current source is proposed in this paper to speed-up the switching process. Performed double-pulse measurements show improved dynamic performance of the tested DGTJFET with the new driver.
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| 2. |
- Akbari, Saeed, et al.
(författare)
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Ceramic Additive Manufacturing Potential for Power Electronics Packaging
- 2022
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Ingår i: IEEE Transactions on Components, Packaging, and Manufacturing Technology. - : Institute of Electrical and Electronics Engineers Inc.. - 2156-3950 .- 2156-3985. ; 12:11, s. 1857-1866
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Tidskriftsartikel (refereegranskat)abstract
- Compared with silicon-based power devices, wide band gap (WBG) semiconductor devices operate at significantly higher power densities required in applications such as electric vehicles and more electric airplanes. This necessitates development of power electronics packages with enhanced thermal characteristics that fulfil the electrical insulation requirements. The present research investigates the feasibility of using ceramic additive manufacturing (AM), also known as three-dimensional (3D) printing, to address thermal and electrical requirements in packaging gallium nitride (GaN) based high-electron-mobility transistors (HEMTs). The goal is to exploit design freedom and manufacturing flexibility provided by ceramic AM to fabricate power device packages with a lower junction-to-ambient thermal resistance (RθJA). Ceramic AM also enables incorporation of intricate 3D features into the package structure in order to control the isolation distance between the package source and drain contact pads. Moreover, AM allows to fabricate different parts of the packaging assembly as a single structure to avoid high thermal resistance interfaces. For example, the ceramic package and the ceramic heatsink can be printed as a single part without any bonding layer. Thermal simulations under different thermal loading and cooling conditions show the improvement of thermal performance of the package fabricated by ceramic AM. If assisted by an efficient cooling strategy, the proposed package has the potential to reduce RθJA by up to 48%. The results of the preliminary efforts to fabricate the ceramic package by AM are presented, and the challenges that have to be overcome for further development of this manufacturing method are recognized and discussed.
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| 3. |
- Akbari, Saeed, et al.
(författare)
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Low Inductive SiC Power Electronics Module with Flexible PCB Interconnections and 3D Printed Casing
- 2022
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Ingår i: 2022 IMAPS Nordic Conference on Microelectronics Packaging, NordPac 2022. - : Institute of Electrical and Electronics Engineers Inc.. - 9789189711396
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Konferensbidrag (refereegranskat)abstract
- Silicon carbide (SiC) power devices are steadily increasing their market share in various power electronics applications. However, they require low-inductive packaging in order to realize their full potential. In this research, low-inductive layouts for half-bridge power modules, using a direct bonded copper (DBC) substrate, that are suitable for SiC power devices, were designed and tested. To reduce the negative effects of the switching transients on the gate voltage, flexible printed circuit boards (PCBs) were used to interconnect the gate and source pins of the module with the corresponding pads of the power chips. In addition, conductive springs were used as low inductive, solder-free contacts for the module power terminals. The module casing and lid were produced using additive manufacturing, also known as 3D printing, to create a compact design. It is shown that the inductance of this module is significantly lower than the commercially available modules.
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| 4. |
- Bakowski Holtryd, Mietek, et al.
(författare)
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X-ray sensor, method for constructing an x-ray sensor and an x-ray imaging system comprising such an x-ray sensor
- 2020
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Patent (populärvet., debatt m.m.)abstract
- An X-ray sensor (1) having an active detector region including a plurality of detector diodes (2) arranged on a surface region (3) of the X-ray sensor (1), a junction termination (4) surrounding the surface area (3) including the plurality of detector diodes (2), the junction termination (4) including a guard (5) arranged closest to the end of the surface region (3), a field stop (6) arranged outside the guard (2) and a number N of field limiting rings, FLRs (7) arranged between the guard (5) and the field stop (6), wherein each of the FLRs (7) are placed at positions selected so that distances between different FLRs (7) and between the guard and the first FLR lie within an effective area, the effective area being bounded by the lines α=(10+1.3×(n−1)) μm and β=(5+1.05×(n−1)) μm.
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| 5. |
- Bakowski Holtryd, Mietek, et al.
(författare)
-
X-ray sensor, x-ray detector system and x-ray imaging system
- 2018
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Patent (populärvet., debatt m.m.)abstract
- Disclosed is an x-ray sensor having an active detector region including a plurality of detector diodes at a first side of the sensor, and with placement of the junction termination at a second opposite side of the sensor. Normally, this implies that the junction termination is moved from the top side where the active detector area is located to the bottom side of the sensor, allowing for full utilization of the active detector area at the top side with detector diodes to the very edge of the sensor.
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| 6. |
- Bakowski Holtryd, Mietek, et al.
(författare)
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X-ray sensor, x-ray detector system and x-ray imaging system
- 2019
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Patent (populärvet., debatt m.m.)abstract
- There is provided an x-ray sensor (21) comprising an active detector region including a plurality of detector diodes (22) at a first side of the sensor, and a common junction termination (23) at a second opposite side of the sensor. Normally, this implies that the junction termination (23) is moved from the top side where the active detector area is located to the bottom side of the sensor, allowing for full utilization of the active detector area at the top side with detector diodes to the very edge of the sensor.
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| 7. |
- Bakowski, Mietek, et al.
(författare)
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Design and characterization of newly developed 10 kV 2 A SiC p-i-n diode for soft-switching industrial power supply
- 2015
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Ingår i: IEEE Transactions on Electron Devices. - : Institute of Electrical and Electronics Engineers Inc.. - 0018-9383 .- 1557-9646. ; 62:2, s. 366-373
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Tidskriftsartikel (refereegranskat)abstract
- 10 kV, 2 A SiC p-i-n diodes have been designed and fabricated. The devices feature excellent stability of forward characteristics and robust junction termination with avalanche capability of 1 J. The fabricated diodes have been electrically evaluated with respect to dynamic ON-state voltage, reverse recovery behavior, bipolar stability, and avalanche capability. More than 60% reduction of losses has been demonstrated using newly developed 10-kV p-i-n diodes in a multikilowatt high voltage, high-frequency dc/dc soft-switching converter
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| 8. |
- Bakowski, Mietek
(författare)
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Effect of electron and Helium irradiation on the high current density IV behaviour of Si power diodes-modelling and experiment
- 2004
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Ingår i: ISPSD '04. - TOKYO : INST ELECTR ENGINEERS JAPAN. - 4886860605 ; , s. 253-256
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Konferensbidrag (refereegranskat)abstract
- A complex behaviour of the dynamic IV characteristics of electron and Helium irradiated fast Si diodes under surge current conditions have been modelled successfully using an experimentally based model of the temperature dependence of trapping parameters of dominant recombination centers. A special care has been taken to determine the thermal boundary conditions at the contacts. The correctness of the thermal boundary conditions and of the model and has been verified comparing the measured failure limit (SOA) of the diodes irradiated with varying electron dose and combination of electrons and Helium with the predicted SOA using the model of thermal instability based on the thermal generation of the intrinsic carriers due to the self-heating.
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| 9. |
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| 10. |
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