| 1. |
- Belotcerkovtceva, Daria, et al.
(författare)
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High current limits in chemical vapor deposited graphene spintronic devices
- 2023
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Ingår i: Nano Reseach. - : Springer. - 1998-0124 .- 1998-0000. ; 16:4, s. 4233-4239
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Tidskriftsartikel (refereegranskat)abstract
- Understanding the stability and current-carrying capacity of graphene spintronic devices is key to their applications in graphene channel-based spin current sensors, spin-torque oscillators, and potential spin-integrated circuits. However, despite the demonstrated high current densities in exfoliated graphene, the current-carrying capacity of large-scale chemical vapor deposited (CVD) graphene is not established. Particularly, the grainy nature of chemical vapor deposited graphene and the presence of a tunnel barrier in CVD graphene spin devices pose questions about the stability of high current electrical spin injection. In this work, we observe that despite structural imperfections, CVD graphene sustains remarkably highest currents of 5.2 × 108 A/cm2, up to two orders higher than previously reported values in multilayer CVD graphene, with the capacity primarily dependent upon the sheet resistance of graphene. Furthermore, we notice a reversible regime, up to which CVD graphene can be operated without degradation with operating currents as high as 108 A/cm2, significantly high and durable over long time of operation with spin valve signals observed up to such high current densities. At the same time, the tunnel barrier resistance can be modified by the application of high currents. Our results demonstrate the robustness of large-scale CVD graphene and bring fresh insights for engineering and harnessing pure spin currents for innovative device applications.
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| 3. |
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| 4. |
- Belotcerkovtceva, Daria, et al.
(författare)
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Insights and Implications of Intricate Surface Charge Transfer and sp3-Defects in Graphene/Metal Oxide Interfaces
- 2022
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Ingår i: ACS Applied Materials and Interfaces. - : American Chemical Society (ACS). - 1944-8244 .- 1944-8252. ; 14:31, s. 36209-36216
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Tidskriftsartikel (refereegranskat)abstract
- Adherence of metal oxides to graphene is of fundamental significance to graphene nanoelectronic and spintronic interfaces. Titanium oxide and aluminum oxide are two widely used tunnel barriers in such devices, which offer optimum interface resistance and distinct interface conditions that govern transport parameters and device performance. Here, we reveal a fundamental difference in how these metal oxides interface with graphene through electrical transport measurements and Raman and photoelectron spectroscopies, combined with ab initio electronic structure calculations of such interfaces. While both oxide layers cause surface charge transfer induced p-type doping in graphene, in sharp contrast to TiOx, the AlOx/graphene interface shows the presence of appreciable sp3 defects. Electronic structure calculations disclose that significant p-type doping occurs due to a combination of sp3 bonds formed between C and O atoms at the interface and possible slightly off-stoichiometric defects of the aluminum oxide layer. Furthermore, the sp3 hybridization at the AlOx/graphene interface leads to distinct magnetic moments of unsaturated bonds, which not only explicates the widely observed low spin-lifetimes in AlOx barrier graphene spintronic devices but also suggests possibilities for new hybrid resistive switching and spin valves.
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| 5. |
- Belotcerkovtceva, Daria
(författare)
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Intricacies, Endurance, and Performance Enhancement in Graphene Devices : Towards 2D electronic and spintronic circuits
- 2024
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- Graphene, the atomically thin material of carbon atoms, first isolated experimentally in 2004, exhibits remarkable properties and holds potential for applications in quantum, electrical, and spin-based devices. The chemical vapor deposition (CVD) method enables graphene production on a large scale, merging its exceptional characteristics with scalability and high-quality implementation. Despite the extraordinary promise of CVD graphene with structural imperfections, the main challenge for graphene electronics and spintronics lies in achieving reliability at the device and circuit levels with scalable materials and interfaces. To address these, it is essential to understand the intricacies, endurance, and performance issues in graphene devices. In this thesis, to understand graphene interfaces in devices, we first explored a critical aspect of graphene's interaction with metal oxides, particularly titanium oxide (TiOx) and aluminum oxide (AlOx), and their implications for graphene-based nanoelectronic and spintronic devices. Investigating the electrical characteristics of graphene, both with and without oxides, uncovers the distinct behaviors of TiOx and AlOx when interfaced with graphene, highlighting the charge transfer-induced p-type doping and the formation of sp3 defects, traps, and impurities, especially at the AlOx/graphene interface. These findings bring new insights for graphene spintronic devices while opening possibilities for novel functionalities such as hybrid resistive switching devices. Advancing further towards van der Waals heterostructures in these studies, we could also observe the impact of monolayer MoS2 on graphene’s properties. Next, we explored how CVD graphene devices withstand high current stress to elucidate device durability and resilience. We examine the impact of extreme electric currents on channel structures and resistive tunnel barrier interfaces, focusing on their feasibility for high-capacity electronic and spintronic applications. Here, despite the polycrystalline nature of CVD graphene, we could observe the highest current density of 5.2×108 Acm-2 in graphene on Si/SiO2 substrates, elevating it further to 1.7×109 Acm-2 on diamond substrates, remarkably exceeding previous reports. Performing systematic cyclic electrical measurements, with a gradual increase in the applied high current, we could determine the limits of the reversible regime for safe device operation of both channels and contacts. This knowledge of high current limits and oxide interfaces with graphene leads to an innovative current-treated passive graphene (CTPG) system, where we passivated graphene with metal oxide and applied high current to enhance quality. This method addresses the challenge of interfacial defects and remarkably improves carrier mobility, thereby reducing Coulomb scattering while mitigating electromigration issues. The CTPG presents a scalable platform for stable nanoelectronic and spintronic circuits. The experiments and systems studied in this thesis open possibilities for the exploration of temperature-dependent charge and spin transport measurements via new heterostructures and interfaces with different material combinations.
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| 6. |
- Belotcerkovtceva, Daria
(författare)
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Intricacy and Stability of Graphene Spintronic Devices
- 2023
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Licentiatavhandling (övrigt vetenskapligt/konstnärligt)abstract
- Graphene, the first experimentally isolated atomically thin crystal has displayed numerous superlative properties for quantum and spin-based electronics, as evidenced by research results of more than a decade. The scalable form of graphene, produced by the chemical vapor deposition (CVD) method has been increasingly attracting scientific and technological interest, as outstanding properties are combined with large scalability and high quality. The high-performance devices based on large-scale polycrystalline graphene growth capabilities with efficient charge and spin transport make it prospective for practical implementation into future spintronic and quantum integrated circuits. While CVD graphene presents unlimited prospects for exploring spin currents, there exist challenges along the way in terms of scalability of efficient performance, and reliability. Deformations, wrinkles, and structural (electronic) modifications caused at the interfaces with contacts remain key concerns for device performance. In particular, oxide-based interfaces with graphene are central to both graphenes electronic and spintronic devices. For high-performance scalable devices, it is of crucial significance to understand the details of these interfaces and how devices of CVD graphene with polycrystallinity respond to high current limits. In this thesis, we discuss a systematic study of the effect of e-beam evaporated ultra-thin titanium oxide (TiOx) and aluminum oxide (AlOx) on graphene; which are conventionally used as tunnel barriers in spintronic and nanoelectronics devices. Characteristic topographic features of both metal oxides on the graphene surface were revealed by atomic force microscopy. To estimate the impact of these oxides on graphene, electrical measurements were performed on graphene spin devices with and without metal oxides on the same devices. These measurements show significant p-type doping for both metal oxides, with sustained sheet conductance (σ0) and mobility (μ) values. Strikingly, Raman spectroscopy and X-ray photoelectron spectroscopy show the emergence of significant sp3 carbon for AlOx on graphene, in sharp contrast to TiOx. Our results and observations, together with theoretical calculations provide new insights into how sp3 carbon for AlOx can lead to new memristive mechanisms and explicate enhanced spin relaxation into graphene with AlOx devices, which was widely attributed to the presence of interface pinholes. Here we also investigate how CVD graphene-based devices respond to high current stress to understand their stability and robustness. Despite the grainy and wrinkled structure, we observed the highest till-date current density of 5.2 × 108 A/cm2, remarkably higher than previously reported values for multilayer graphene and graphene nanoribbons. The recorded reversible regime (~108 A/cm2) for device operation allows reliable spin transport measurements with an observable spin signal up at such high current density. Furthermore, our investigation also encompasses cyclical current-voltage electrical measurement, to unveil the stability of graphene/ultra-thin oxide interfaces in graphene devices. Overall, these results present significance for CVD graphene device engineering for nanoelectronics and spintronics.
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| 7. |
- Maciel, Renan P., et al.
(författare)
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Resistive switching in graphene : A theoretical case study on the alumina-graphene interface
- 2023
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Ingår i: Physical Review Research. - : American Physical Society. - 2643-1564. ; 5:4
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Tidskriftsartikel (refereegranskat)abstract
- Neuromorphic computing mimics the brain's architecture to create energy-efficient devices. Reconfigurable synapses are crucial for neuromorphic computing, which can be achieved through memory-resistive (memristive) switching. Graphene-based memristors have shown nonvolatile multibit resistive switching with desirable endurance. Through first-principles calculations, we study the structural and electronic properties of graphene in contact with an ultra-thin alumina overlayer and demonstrate how one can use charge doping to exert direct control over its interfacial covalency, reversibly switching between states of conductivity and resistivity in the graphene layer. We further show that this proposed mechanism can be stabilized through the p-type doping of graphene, e.g., by naturally occurring defects, the passivation of dangling bonds or defect engineering.
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| 8. |
- Mishra, Himanshu, et al.
(författare)
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Experimental advances in charge and spin transport in chemical vapor deposited graphene
- 2021
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Ingår i: Journal of Physics. - : Institute of Physics Publishing (IOPP). - 2515-7639. ; 4:4
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Forskningsöversikt (refereegranskat)abstract
- Despite structural and processing-induced imperfections, wafer-scale chemical vapor deposited (CVD) graphene today is commercially available and has emerged as a versatile form that can be readily transferred to desired substrates for various nanoelectronic and spintronic applications. In particular, over the past decade, significant advancements in CVD graphene synthesis methods and experiments realizing high-quality charge and spin transport have been achieved. These include growth of large-grain graphene, new processing methods, high-quality electrical transport with high-carrier mobility, micron-scale ballistic transport, observations of quantum and fractional quantum Hall effect, as well as the spintronic performance of extremely long spin communication over tens of micrometers at room temperature with robust spin diffusion lengths and spin lifetimes. In this short review, we discuss the progress in recent years in the synthesis of high-quality, large-scale CVD graphene and improvement of the electrical and spin transport performance, particularly towards achieving ballistic and long-distance spin transport that show exceptional promise for next-generation graphene electronic and spintronic applications.
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| 9. |
- Salvador-Porroche, Alba, et al.
(författare)
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Highly-efficient growth of cobalt nanostructures using focused ion beam induced deposition under cryogenic conditions : application to electrical contacts on graphene, magnetism and hard masking
- 2021
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Ingår i: Nanoscale Advances. - : Royal Society of Chemistry. - 2516-0230. ; 3:19, s. 5656-5662
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Tidskriftsartikel (refereegranskat)abstract
- Emergent technologies are required in the field of nanoelectronics for improved contacts and interconnects at nano and micro-scale. In this work, we report a highly-efficient nanolithography process for the growth of cobalt nanostructures requiring an ultra-low charge dose (15 mu C cm(-2), unprecedented in single-step charge-based nanopatterning). This resist-free process consists in the condensation of a similar to 28 nm-thick Co-2(CO)(8) layer on a substrate held at -100 degrees C, its irradiation with a Ga+ focused ion beam, and substrate heating up to room temperature. The resulting cobalt-based deposits exhibit sub-100 nm lateral resolution, display metallic behaviour (room-temperature resistivity of 200 mu omega cm), present ferromagnetic properties (magnetization at room temperature of 400 emu cm(-3)) and can be grown in large areas. To put these results in perspective, similar properties can be achieved by room-temperature focused ion beam induced deposition and the same precursor only if a 2 x 10(3) times higher charge dose is used. We demonstrate the application of such an ultra-fast growth process to directly create electrical contacts onto graphene ribbons, opening the route for a broad application of this technology to any 2D material. In addition, the application of these cryo-deposits for hard masking is demonstrated, confirming its structural functionality.
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