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- Driussi, F., et al.
(författare)
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Fabrication, characterization and modeling of strained SOI MOSFETs with very large effective mobility
- 2007
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Ingår i: ESSDERC 2007. - 9781424411238 ; , s. 315-318
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Konferensbidrag (refereegranskat)abstract
- Strained Silicon on insulators (sSOI) wafers with a supercritical thickness of 58 nm were produced using thin strain relaxed SiGe buffer layers, wafer bonding, selective etch back and epitaxial overgrowth. Raman spectroscopy revealed an homogeneous strain of 0.63 +/- 0.03% in the strained Si layer. Long channel n-type SOI-MOSFETs showed very large electron mobilities up to 1200 cm(2)/Vs in the strained Si devices. These values are more than two times larger than those of reference SOI n-MOSFETs. Mobility simulations with state of the art scattering models are then used to interpret the experiments.
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