| 1. |
- Stamps, R. L., et al.
(författare)
-
The 2014 Magnetism Roadmap
- 2014
-
Ingår i: Journal of Physics D-Applied Physics. - : IOP Publishing. - 0022-3727 .- 1361-6463. ; 47:33
-
Tidskriftsartikel (refereegranskat)abstract
- Magnetism is a very fascinating and dynamic field. Especially in the last 30 years, there have been many major advances in a range of areas from novel fundamental phenomena to new products. Applications such as hard disc drives and magnetic sensors are part of our daily life and new applications, such as in non-volatile computer random access memory, are expected to surface shortly. Thus it is an opportune time for describing the current status and current and future challenges in the form of a roadmap article. The 2014 Magnetism Roadmap provides a view on several selected, presently very active innovative developments. It consists of twelve sections, each written by an expert in the field and addressing a specific subject, with a strong emphasis on future potential. This Roadmap cannot cover the entire field. Several highly relevant areas have been selected without attempting to provide a full review - a future update will aim to address further. The scope covers mostly nanomagnetic phenomena and applications, where surfaces and interfaces provide additional functionality. New developments in fundamental topics such as interacting nanoelements, novel magnon-based spintronics concepts, spin-orbit torques and spin-caloric phenomena are addressed. New materials such as organic magnetic materials and permanent magnets are covered. New applications are presented such as nanomagnetic logic, non-local and domain-wall based devices, heat-assisted magnetic recording, magnetic random access memory and applications in biotechnology. This Roadmap acts to serve as a guideline for future emerging research directions in modern magnetism.
|
|
| 2. |
- Dieny, B., et al.
(författare)
-
Opportunities and challenges for spintronics in the microelectronics industry
- 2020
-
Ingår i: Nature Electronics. - : Springer Science and Business Media LLC. - 2520-1131. ; 3:8, s. 446-459
-
Tidskriftsartikel (refereegranskat)abstract
- This Review Article examines the potential of spintronics in four key areas of application -memories, sensors, microwave devices, and logic devices - and discusses the challenges that need be addressed in order to integrate spintronic materials and functionalities into mainstream microelectronic platforms. Spintronic devices exploit the spin, as well as the charge, of electrons and could bring new capabilities to the microelectronics industry. However, in order for spintronic devices to meet the ever-increasing demands of the industry, innovation in terms of materials, processes and circuits are required. Here, we review recent developments in spintronics that could soon have an impact on the microelectronics and information technology industry. We highlight and explore four key areas: magnetic memories, magnetic sensors, radio-frequency and microwave devices, and logic and non-Boolean devices. We also discuss the challenges-at both the device and the system level-that need be addressed in order to integrate spintronic materials and functionalities into mainstream microelectronic platforms.
|
|
| 3. |
- Iovan, Adrian, et al.
(författare)
-
Spin diode based on Fe/MgO double tunnel junction
- 2008
-
Ingår i: Nano letters (Print). - : American Chemical Society (ACS). - 1530-6984 .- 1530-6992. ; 8:3, s. 805-809
-
Tidskriftsartikel (refereegranskat)abstract
- We demonstrate a spin diode consisting of a semiconductor-free nanoscale Fe/MgO-based double tunnel junction. The device exhibits a near perfect spin-valve effect combined with a strong diode effect. The mechanism consistent with our data is resonant tunneling through discrete states in the middle ferromagnetic layer sandwiched by tunnel barriers of different spin-dependent transparency. The observed magnetoresistance is a record high > 1000%, essentially making the structure an on/off spin switch. This, combined with the strong diode effect, similar to 100, demonstrates a new device principle, promising for memory and reprogrammable logic applications.
|
|
| 4. |
- Manchon, A., et al.
(författare)
-
Currents and torques due to spin-dependent diffraction in ferromagnetic/spin spiral bilayers
- 2008
-
Ingår i: Journal of Physics. - : Institute of Physics (IOP). - 0953-8984 .- 1361-648X. ; 20:50, s. 505213-
-
Tidskriftsartikel (refereegranskat)abstract
- Spin-dependent transport through the interface between a ferromagnet and a spin spiral is investigated using both ballistic and diffusive models. We find that spin-dependent interferences lead to a new type of diffraction called 'spin diffraction'. It is shown that this spin diffraction leads to local spin and electrical current along the interface, as well as spin transfer torque acting on the spin spiral. This study also emphasizes that in highly inhomogeneous magnetic configurations, diffracted electrons must be taken into account to properly describe the spin transport.
|
|
| 5. |
- Ryzhanova, N., et al.
(författare)
-
Quasi-two-dimensional extraordinary Hall effect
- 2009
-
Ingår i: Physical Review B. Condensed Matter and Materials Physics. - : American Physical Society. - 1098-0121 .- 1550-235X. ; 80:2, s. 024410-
-
Tidskriftsartikel (refereegranskat)abstract
- Quasi-two-dimensional transport is investigated in a system consisting of a very thin 1 nm ferromagneticlayer sandwiched between two insulating layers. Using the mechanism of skew scattering to describe theextraordinary Hall effect EHE and calculating the conductivity tensor, we compare the quasi-two-dimensionalHall resistance with the Hall resistance of a massive sample. In this study, a mechanism of EHE geometricmechanism of EHE due to nonideal interfaces and volume defects is also proposed.
|
|
| 6. |
- Salazar-Alvarez, German, et al.
(författare)
-
Direct evidence of imprinted vortex states in the antiferromagnet of exchange biased microdisks
- 2009
-
Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 95:1, s. 012510-
-
Tidskriftsartikel (refereegranskat)abstract
- The magnetic domain structure of patterned antiferromagnetic/ferromagnetic Ir20Mn80/Ni80Fe20 bilayer microdisk arrays has been investigated using layer-specific polarized x-ray photoemission electron microscopy and magnetic circular dichroism. Magnetic imaging at the Fe and Mn L-edge resonances provided direct evidence of a vortex state imprinted into the antiferromagnet at the interface. The opposite magnetic contrast between the layers indicated a reversed chirality of the imprinted vortex state, and a quantitative analysis of the magnetic moment from the dichroism spectra showed that uncompensated Mn spins equivalent to about 60% of a monolayer of bulk Ir20Mn80 contributed to the imprinted information at the interface.
|
|
| 7. |
|
|
