| 1. |
- Olsen, S. H., et al.
(författare)
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Strained Si/SiGe MOS technology : Improving gate dielectric integrity
- 2009
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Ingår i: Microelectronic Engineering. - : Elsevier BV. - 0167-9317 .- 1873-5568. ; 86:3, s. 218-223
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Tidskriftsartikel (refereegranskat)abstract
- Strained Si is recognised as a necessary technology booster for the nanoelectronics regime. This work shows that high levels of stress attainable from globally strained Si/SiGe platforms can benefit gate leakage and reliability in addition to MOSFET channel mobility. Device self-heating due to the low thermal conductivity of SiGe is shown to be the dominating factor behind compromised performance against short channel strained Si/SiGe MOSFETs. Novel thin virtual substrates aimed at reducing self-heating effects are investigated. In addition to reducing self-heating effects, the thin Virtual substrates provide further improvements to gate oxide integrity, reliability and lifetime compared with conventional thick virtual substrates. This is attributed to tire lower surface roughness of the thin virtual substrates which arises due to the reduced interactions of strain-relieving misfit dislocations during thin Virtual substrate growth. Good agreement between experimental data and physical models is demonstrated, enabling gate leakage mechanisms to be identified. The advantages and challenges of using globally strained Si/SiGe to advance MOS technology are discussed.
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| 2. |
- O'Neill, A.G., et al.
(författare)
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Strained silicon technology
- 2007
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Ingår i: ICSICT-2006. - 1424401615 - 9781424401611 ; , s. 104-107
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Konferensbidrag (refereegranskat)abstract
- Following a brief review of strained silicon technology options, this paper presents results and analysis of strained Si n-channel MOSFETs fabricated on thin SiGe virtual substrates. Significant improvements in electrical performance are demonstrated compared with Si control devices. The impact of SiGe device self-heating is compared for strained Si MOSFETs fabricated on thin and thick virtual substrates. The work demonstrates that by using high quality thin virtual substrates the compromised performance enhancements commonly observed in short gate length MOSFETs and high bias conditions due to self-heating in conventional thick virtual substrate devices are eradicated.
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| 3. |
- Persson, S., et al.
(författare)
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Fabrication and characterisation of strained Si heterojunction bipolar transistors on virtual substrates
- 2008
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Ingår i: IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST. - NEW YORK : IEEE. ; , s. 735-738
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Konferensbidrag (refereegranskat)abstract
- Strained Si HBTs have been demonstrated for the first time with a maximum current gain (P) of 3700 using a relaxed Si(0.85)Ge(0.15) virtual substrate, Si(0.7)Ge(0.3) base and strained Si emitter. This represents 10x and 27x larger gain compared with pseudomorphic SiGe HBTs and Si control BJTs which were manufactured in parallel and had current gains of 334 and 135, respectively. The strained Si HBTs exhibited satisfactory breakdown voltage (2.5 V) compared with SiGe HBTs (2.7 V) and Si BJTs (4.5 V) and excellent control of collector off-state leakage (< 20 fA).
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| 4. |
- Fjer, M., et al.
(författare)
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Low frequency noise in strained Si heterojunction bipolar transistors
- 2011
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Ingår i: IEEE Transactions on Electron Devices. - 0018-9383 .- 1557-9646. ; 58:12, s. 4196-4203
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Tidskriftsartikel (refereegranskat)abstract
- The low frequency noise performance of strained Si heterojunction bipolar transistors (sSi HBTs) is presented for the first time. Conventional SiGe HBTs and Si bipolar junction transistors (BJTs), processed with strained Si devices, were also measured as a reference. It is found that a lower noise level is obtained in sSi HBTs for a given collector current, which is important for circuit applications, compared with either SiGe HBTs or Si BJTs. However, sSi HBTs exhibit greater low frequency noise compared with other devices at fixed base current. This is due to the presence of defects that are caused by the integration of the strain-relaxed buffer in the fabrication of sSi HBTs. The relationship between low frequency noise and defects is supported by material characterization. © 2011 IEEE.
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