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Search: WFRF:(Gerhardt Ilja)

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  • Nagy, Roland, et al. (author)
  • Quantum Properties of Dichroic Silicon Vacancies in Silicon Carbide
  • 2018
  • In: Physical Review Applied. - 2331-7019. ; 9:3
  • Journal article (peer-reviewed)abstract
    • Although various defect centers have displayed promise as either quantum sensors, single photon emitters, or light-matter interfaces, the search for an ideal defect with multifunctional ability remains open. In this spirit, we study the dichroic silicon vacancies in silicon carbide that feature two well-distinguishable zero-phonon lines and analyze the quantum properties in their optical emission and spin control. We demonstrate that this center combines 40% optical emission into the zero-phonon lines showing the contrasting difference in optical properties with varying temperature and polarization, and a 100% increase in the fluorescence intensity upon the spin resonance, and long spin coherence time of their spin-3/2 ground states up to 0.6 ms. These results single out this defect center as a promising system for spin-based quantum technologies.
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3.
  • Widmann, Matthias, et al. (author)
  • Coherent control of single spins in silicon carbide at room temperature
  • 2015
  • In: Nature Materials. - : Nature Publishing Group. - 1476-1122 .- 1476-4660. ; 14:2, s. 164-168
  • Journal article (peer-reviewed)abstract
    • Spins in solids are cornerstone elements of quantum spintronics(1). Leading contenders such as defects in diamond(2-5) or individual phosphorus dopants in silicon(6) have shown spectacular progress, but either lack established nanotechnology or an efficient spin/photon interface. Silicon carbide (SiC) combines the strength of both systems(5):it has a large bandgap with deep defects(7-9) and benefits from mature fabrication techniques(10-12). Here, we report the characterization of photoluminescence and optical spin polarization from single silicon vacancies in SiC, and demonstrate that single spins can be addressed at room temperature. We show coherent control of a single defect spin and find long spin coherence times under ambient conditions. Our study provides evidence that SiC is a promising system for atomic-scale spintronics and quantum technology.
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