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| 2. |
- Tien Son, Nguyen, et al.
(författare)
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Negative-U System of Carbon Vacancy in 4H-SiC
- 2012
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Ingår i: Physical Review Letters. - : American Physical Society. - 0031-9007 .- 1079-7114. ; 109:18, s. 187603-
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Tidskriftsartikel (refereegranskat)abstract
- Using electron paramagnetic resonance (EPR), energy levels of the carbon vacancy (V-C) in 4H-SiC and its negative-U properties have been determined. Combining EPR and deep-level transient spectroscopy we show that the two most common defects in as-grown 4H-SiC-the Z(1/2) lifetime-limiting defect and the EH7 deep defect-are related to the double acceptor (2 - vertical bar 0) and single donor (0 vertical bar +) levels of V-C, respectively.
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| 3. |
- J T Simms, R J T, et al.
(författare)
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Micro-Raman spectroscopy as a voltage probe in AlGaN/GaN heterostructure devices: Determination of buffer resistances
- 2011
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Ingår i: SOLID-STATE ELECTRONICS. - : Elsevier Science B.V., Amsterdam.. - 0038-1101. ; 55:1, s. 5-7
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Tidskriftsartikel (refereegranskat)abstract
- A time-resolved micro-Raman technique was developed to probe the transient voltage in the GaN buffer layer of AlGaN/GaN heterostructure devices. The transient potential distribution under Ohmic contacts of devices behaved like a capacitance-resistance coupled network, with a decrease in amplitude and phase shift of the potential as a function of operating voltage frequency. This phenomenon was used to extract a value of 0.6 M Omega/square for sheet resistance of the AIN nucleation layer at the GaN/SiC interface from the characteristic RC value of the network. This demonstrates the effectiveness of this voltage probe technique as a non-invasive method of characterizing nucleation layers.
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| 4. |
- Umeda, T., et al.
(författare)
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EPR and theoretical studies of positively charged carbon vacancy in 4H-SiC
- 2004
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - : American Physical Society. - 1098-0121 .- 1550-235X. ; 70:23
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Tidskriftsartikel (refereegranskat)abstract
- The carbon vacancy is a dominant defect in 4H-SiC, and the "E15" electron-paramagnetic-resonance (EPR) spectrum originates from positively charged carbon vacancies (VC+) at quasicubic sites. The observed state for EI5, however, has been attributed to a motional-averaged state with the C3v symmetry, and its true atomic structure has not been revealed so far. We here report low temperature (
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| 5. |
- Breyer, F., et al.
(författare)
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TPL-2 kinase induces phagosome acidification to promote macrophage killing of bacteria
- 2021
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Ingår i: Embo Journal. - : EMBO. - 0261-4189 .- 1460-2075. ; 40:10
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Tidskriftsartikel (refereegranskat)abstract
- Tumour progression locus 2 (TPL-2) kinase mediates Toll-like receptor (TLR) activation of ERK1/2 and p38 alpha MAP kinases in myeloid cells to modulate expression of key cytokines in innate immunity. This study identified a novel MAP kinase-independent regulatory function for TPL-2 in phagosome maturation, an essential process for killing of phagocytosed microbes. TPL-2 catalytic activity was demonstrated to induce phagosome acidification and proteolysis in primary mouse and human macrophages following uptake of latex beads. Quantitative proteomics revealed that blocking TPL-2 catalytic activity significantly altered the protein composition of phagosomes, particularly reducing the abundance of V-ATPase proton pump subunits. Furthermore, TPL-2 stimulated the phosphorylation of DMXL1, a regulator of V-ATPases, to induce V-ATPase assembly and phagosome acidification. Consistent with these results, TPL-2 catalytic activity was required for phagosome acidification and the efficient killing of Staphylococcus aureus and Citrobacter rodentium following phagocytic uptake by macrophages. TPL-2 therefore controls innate immune responses of macrophages to bacteria via V-ATPase induction of phagosome maturation.
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| 7. |
- Isoya, J., et al.
(författare)
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EPR Identification of Defects and Impurities in SiC : To Be Decisive
- 2009
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Ingår i: Materials Science Forum, Vols. 600-603. - : Trans Tech Publications. ; , s. 279-284
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Konferensbidrag (refereegranskat)abstract
- In EPR (electron paramagnetic resonance) identification of point defects, hyperfine (HF) interaction is decisive information not only for chemical identity but also for the local geometry and the electronic state. In some intrinsic defects in SiC, the wave function of the unpaired electron extends quite unevenly among major atoms comprising the defects. In such a case, the determination of the number of equivalent atoms and the chemical identity (Si or C) of those atoms even with weak HF splitting are useful to compare with HF parameters obtained theoretically. For vacancy-related defects of relatively deep levels, the sum of the spin densities on the nearest-neighbor shell is found to be 60-68%.
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| 9. |
- Isoya, J., et al.
(författare)
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EPR identification of intrinsic defects in SiC
- 2008
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Ingår i: Physica status solidi. B, Basic research. - : Wiley. - 0370-1972 .- 1521-3951. ; 245:7, s. 1298-1314
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Tidskriftsartikel (refereegranskat)abstract
- The structure determination of intrinsic defects in 4H-SiC, 6H-SiC, and 3C-SiC by means of EPR is based on measuring the angular dependence of the 29Si/13C hyperfine (HF) satellite lines, from which spin densities, sp-hybrid ratio, and p-orbital direction can be determined over major atoms comprising a defect. In most cases, not only the assignment of the variety due to the inequivalent sites (h- and k-sites in 4H-SiC) but also the identification of the defect species is accomplished through the comparison of the obtained HF parameters with those obtained from first principles calculations. Our works of identifying vacancy-related defects such as the monovacancies, divacancies, and antisite-vacancy pairs in 4H-SiC are reviewed. In addition, it is demonstrated that the observation of the central line of the TV2a center of S = 3/2 has been achieved by pulsed-ELDOR. © 2008 Wiley-VCH Verlag GmbH & Co. KGaA.
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