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- Kim, Joon Tae, et al.
(författare)
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Dual antiplatelet Use for extended period taRgeted to AcuTe ischemic stroke with presumed atherosclerotic OrigiN (DURATION) trial : Rationale and design
- 2023
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Ingår i: International Journal of Stroke. - : SAGE Publications. - 1747-4930 .- 1747-4949. ; 18:8, s. 1015-1020
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Tidskriftsartikel (refereegranskat)abstract
- Rationale: The optimal duration of dual antiplatelet therapy (DAPT) with clopidogrel-aspirin for the large artery atherosclerotic (LAA) stroke subtype has been debated. Aims: To determine whether the 1-year risk of recurrent vascular events could be reduced by a longer duration of DAPT in patients with the LAA stroke subtype. Methods and study design: A total of 4806 participants will be recruited to detect a statistically significant relative risk reduction of 22% with 80% power and a two-sided alpha error of 0.05, including a 10% loss to follow-up. This is a registry-based, multicenter, prospective, randomized, open-label, blinded end point study designed to evaluate the efficacy and safety of a 12-month duration of DAPT compared with a 3-month duration of DAPT in the LAA stroke subtype. Patients will be randomized (1:1) to either DAPT for 12 months or DAPT for 3 months, followed by monotherapy (either aspirin or clopidogrel) for the remaining 9 months. Study outcomes: The primary efficacy outcome of the study is a composite of stroke (ischemic or hemorrhagic), myocardial infarction, and all-cause mortality for 1 year after the index stroke. The secondary efficacy outcomes are (1) stroke, (2) ischemic stroke or transient ischemic attack, (3) hemorrhagic stroke, and (4) all-cause mortality. The primary safety outcome is major bleeding. Discussion: This study will help stroke physicians determine the appropriate duration of dual therapy with clopidogrel-aspirin for patients with the LAA stroke subtype. Trial registration: URL: https://cris.nih.go.kr/cris. CRIS Registration Number: KCT0004407.
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| 5. |
- Lee, SangWook, et al.
(författare)
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In situ Raman measurements of suspended individual single-walled carbon nanotubes under strain
- 2007
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Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6984 .- 1530-6992. ; 7, s. 2590-2595
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Tidskriftsartikel (refereegranskat)abstract
- We present a technique for in situ Raman measurements of suspended individual single-walled carbon nanotubes (SWNTs) under strain. We observe a strong change in the radial breathing mode intensity with increasing strain as the nanotube moves out of (or into) resonance, and for strain greater than 2%, there is a clear irreversible upshift in the G-mode frequencies accompanied by an increase in intensity of a broad peak at a position associated with the D mode. For lower strain, the G-mode peaks (A1, E1, and E2) do not change significantly in position but change in relative intensity.
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| 6. |
- Mu, Wei, 1985, et al.
(författare)
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Enhanced Cold Wall CVD Reactor Growth of Horizontally Aligned Single-walled Carbon Nanotubes
- 2016
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Ingår i: Electronic Materials Letters. - : Springer Science and Business Media LLC. - 1738-8090 .- 2093-6788. ; 12:3, s. 329-337
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Tidskriftsartikel (refereegranskat)abstract
- Synthesis of horizontally-aligned single-walled carbon nanotubes (HA-SWCNTs) by chemical vapor deposition (CVD) directly on quartz seems very promising for the fabrication of future nanoelectronic devices. In comparison to hot-wall CVD, synthesis of HA-SWCNTs in a cold-wall CVD chamber not only means shorter heating, cooling and growth periods, but also prevents contamination of the chamber. However, since most synthesis of HA-SWCNTs is performed in hot-wall reactors, adapting this well-established process to a cold-wall chamber becomes extremely crucial. Here, in order to transfer the CVD growth technology from a hot-wall to a cold-wall chamber, a systematic investigation has been conducted to determine the influence of process parameters on the HA-SWCNT’s growth. For two reasons, the cold-wall CVD chamber was upgraded with a top heater to complement the bottom substrate heater; the first reason to maintain a more uniform temperature profile during HA-SWCNTs growth, and the second reason to preheat the precursor gas flow before projecting it onto the catalyst. Our results show that the addition of a top heater had a significant effect on the synthesis. Characterization of the CNTs shows that the average density of HA-SWCNTs is around 1-2 tubes/μm with high growth quality as shown by Raman analysis.
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| 7. |
- Wang, Teng, 1983, et al.
(författare)
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Low temperature transfer and formation of carbon nanotube arrays by imprinted conductive adhesive
- 2007
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 91:9
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Tidskriftsartikel (refereegranskat)abstract
- This letter demonstrates the transfer and formation of aligned carbon nanotube (CNT) arrays at low temperature by imprinted conductive adhesive. A thermoplastic isotropic conductive adhesive is patterned by an imprint and heat transfer process. The CNTs grown by thermal chemical vapor deposition are then transferred to another substrate by the conductive adhesive, forming predefined patterns. The current-voltage response of the transferred CNT bundles verifies that good electrical connection has been established. This process can enable the integration of CNTs into various temperature-sensitive processeses and materials.
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