| 1. |
- Sloot, Frea, et al.
(författare)
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Inventory of current EU paediatric vision and hearing screening programmes
- 2015
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Ingår i: Journal of Medical Screening. - : SAGE Publications. - 0969-1413 .- 1475-5793. ; 22:2, s. 55-64
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Tidskriftsartikel (refereegranskat)abstract
- Objective: To examine the diversity in paediatric vision and hearing screening programmes in Europe. Methods: Themes for comparison of screening programmes derived from literature were used to compile three questionnaires on vision, hearing, and public health screening. Tests used, professions involved, age, and frequency of testing seem to influence sensitivity, specificity, and costs most. Questionnaires were sent to ophthalmologists, orthoptists, otolaryngologists, and audiologists involved in paediatric screening in all EU full-member, candidate, and associate states. Answers were cross-checked. Results: Thirty-nine countries participated; 35 have a vision screening programme, 33 a nation-wide neonatal hearing screening programme. Visual acuity (VA) is measured in 35 countries, in 71% of these more than once. First measurement of VA varies from three to seven years of age, but is usually before age five. At age three and four, picture charts, including Lea Hyvarinen, are used most; in children over four, Tumbling-E and Snellen. As first hearing screening test, otoacoustic emission is used most in healthy neonates, and auditory brainstem response in premature newborns. The majority of hearing testing programmes are staged; children are referred after 1–4 abnormal tests. Vision screening is performed mostly by paediatricians, ophthalmologists, or nurses. Funding is mostly by health insurance or state. Coverage was reported as >95% in half of countries, but reporting was often not first-hand. Conclusion: Largest differences were found in VA charts used (12), professions involved in vision screening (10), number of hearing screening tests before referral (1–4), and funding sources (8).
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| 2. |
- Lorenzzi, J., et al.
(författare)
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Incorporation of group III, IV and V elements in 3C–SiC(1 1 1) layers grown by the vapour–liquid–solid mechanism
- 2010
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Ingår i: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248 .- 1873-5002. ; 312:23, s. 3443-3450
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Tidskriftsartikel (refereegranskat)abstract
- We report on a comparative investigation of the incorporation of group III, IV and V impurities in 3C–SiC heteroepitaxial layers grown by the vapour–liquid–solid (VLS) mechanism on on-axis α-SiC substrates. To this end, various Si-based melts have been used with addition of Al, Ga, Ge and Sn species. Homoepitaxial α-SiC layers grown using Al-based melts were used for comparison purposed for Al incorporation. Nitrogen incorporation depth profile systematically displays an overshoot at the substrate/epilayer interface for all the layers. Ga and Al incorporations follow the same distribution shape as N whereas this is not the case for the isoelectronic impurities Ge and Sn. This suggests some interaction between Ga/Al and N coming from the high bonding energy between the group III and V elements, which does not exist with Ge and Sn. This is why both incorporate as a cluster. A model of incorporation is proposed taking into account metal-N and metal-C bonding energies together with the solid solubility of the corresponding nitrides.
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| 3. |
- Marinova, Maya, et al.
(författare)
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Structural and Optical Investigation of VLS Grown (111) 3C-SiC Layers on 6H-SiC Substrates in Sn-Based Melts
- 2011
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Ingår i: Silicon Carbide and Related Materials 2010. ; , s. 165-168
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Konferensbidrag (refereegranskat)abstract
- The current communication focuses on the investigation of 3C-SiC layers grown by the Vapour-Liquid-Solid mechanism on on-axis Si-face 6H-SiC substrates in SiSn melts with different compositions and at different growth temperatures. The layers are studied by Transmission Electron Microscopy and Low Temperature Photoluminescence. It was found that for melts with Sn concentration higher than 60 at% large Sn-related precipitates are formed. The depth distribution of the Sn precipitates strongly depends not only on the melt composition but also on the growth temperature. Their formation strongly influences the stacking fault density and the dopant incorporation in the layers. Lower Sn concentrations combined with higher growth temperatures should result in 3C-SiC layer with enhanced structural quality.
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| 4. |
- Robert, T., et al.
(författare)
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6H-type zigzag faults in low-doped 4H-SiC epitaxial layers.
- 2010
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Ingår i: Mat. Sci. Forum, Vols. 645-648. - 0878492798 - 9780878492794 ; , s. 347-350
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Konferensbidrag (refereegranskat)abstract
- A new type of 6H zigzag faults has been identified from high resolution transmission electron microscopy (HRTEM) measurements performed on low-doped 4H-SiC homoepitaxial layer grown on off-axis substrates in a hot-wall CVD reactor. They are made of half unit cells of 6H with corresponding low temperature photoluminescence (LTPL) response ranging from about 3 eV to 2.5 eV at liquid helium temperature.
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| 5. |
- Sun, Jianwu, et al.
(författare)
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Shockley-Frank stacking faults in 6H-SiC
- 2012
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Ingår i: Journal of Applied Physics. - : American Institute of Physics (AIP). - 0021-8979 .- 1089-7550. ; 111, s. 113527-
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Tidskriftsartikel (refereegranskat)abstract
- We report on Shockley-Frank stacking faults (SFs) identified in 6H-SiC by a combination of low temperature photoluminescence (LTPL) and high resolution transmission electron microscopy (TEM). In the faulted area, stacking faults manifested as large photoluminescence emissions bands located in between the 6H-SiC signal (at ∼2.99 eV) and the 3C-SiC bulk-like one (at ∼2.39 eV). Each of the stacking fault related emission band had a four-fold structure coming from the TA, LA, TO, and LO phonon modes of 3C-SiC. Up to four different faults, with four different thickness of the 3C-SiC lamella, could be observed simultaneously within the extent of the laser excitation spot. From the energy of the momentum-conservative phonons, they were associated with excitonic energy gaps at Egx1 = 2.837 eV, Egx2 = 2.689 eV, Egx3 = 2.600 eV and Egx4 = 2.525 eV. In the same part where low temperature photoluminescence was performed, high resolution transmission electron microscopy measurements revealed stacking faults which, in terms of the Zhdanov notation, could be recognized as SFs (3, 4), (3, 5), (3, 6), (3, 7), (3, 9), (3, 11), (3, 16) and (3, 22), respectively. Among them stacking fault (3, 4) was the most common one, but a faulted region with a (4, 4) 8H-SiC like sequence was also found. Using a type II 6H/3C/6H quantum-well model and comparing with experimental results, we find that the photoluminescence emissions with excitonic band gaps at 2.837 eV (Egx1), 2.689 eV (Egx2), 2.600 eV (Egx3) and 2.525 eV (Egx4) come from SFs (3, 4), (3, 5), (3, 6) and (3, 7), respectively. A possible formation mechanism of these SFs is suggested, which involves a combination of Frank faults with Shockley ones. This provides a basic understanding of stacking faults in 6H-SiC and gives a rapid and non-destructive approach to identify SFs by low temperature photoluminescence.
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| 6. |
- Vasiliauskas, Remigijus, et al.
(författare)
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Effect of initial substrate conditions on growth of cubic silicon carbide
- 2011
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Ingår i: Journal of Crystal Growth. - : Elsevier Science B.V., Amsterdam.. - 0022-0248 .- 1873-5002. ; 324:1, s. 7-14
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Tidskriftsartikel (refereegranskat)abstract
- In order to analyze the epitaxial growth of cubic silicon carbide by sublimation epitaxy on different substrates, four different 6H-SiC substrate preparations were used: (i) as-received, (ii) re-polished, (iii) annealed and covered by silicon layer and (iv) with (1 1 1) 3C-SiC buffer layer. Almost 100% coverage and low twin density was achieved when grown on the buffer layer. The XRD and TEM characterizations show better material quality when the layer is grown directly on 6H-SiC substrates. Background doping evaluated by LTPL is in the range of 10(16) cm(-3) for N and 10(16) cm(-3) for Al in all grown layers.
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| 7. |
- Vasiliauskas, Remigijus, et al.
(författare)
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Polytype transformation and structural characteristics of 3C-SiC on 6H-SiC substrates
- 2014
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Ingår i: Journal of Crystal Growth. - : Elsevier BV. - 0022-0248 .- 1873-5002. ; 395, s. 109-115
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Tidskriftsartikel (refereegranskat)abstract
- The 3C-SiC (111) was grown on on-axis 6H-SiC substrates in a temperature interval ranging from 1675oC where 3C-SiC nucleated, to 1825oC where coverage of the substrate by 3C-SiC was nearly 100%. The 6H- to 3C-SiC transformation was not abrupt and two different transitions could be observed. The first one occurs before or during 3C-SiC nucleation and consists of 6H-, 3C-, 15R-SiC and other unresolved stacking sequences. The second one appears due to 6H-SiC and 3C-SiC competition during the growth and results in non flat needle-like interface. A proposed model elucidates connection between four-fold twins nucleating at the 6H-/3C-SiC interface and the formation of depressions at the surface of the 3C-SiC layer.
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| 8. |
- Vasiliauskas, Remigijus, et al.
(författare)
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Sublimation Growth and Structural Characterization of 3C-SiC on Hexagonal and Cubic SiC Seeds
- 2010
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Ingår i: Materials Science Forum, Vols. 645-648. - : Transtec Publications; 1999. ; , s. 175-178
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Konferensbidrag (refereegranskat)abstract
- Epitaxial growth of cubic silicon carbide on 6H-SiC substrates, and 6H-SiC substrates with (111) 3C-SiC buffer layer, deposited by vapour liquid solid mechanism, was compared. The morphological details of the grown layers were studied by optical microscopy and their microstructure by transmission electron microscopy. The influence of the substrate on the nucleation of 3C-SiC, the initial homoepitaxial 6H-SiC nucleation before 3C-SiC as well as the formation of defects, are discussed.
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