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- Gogova, D., et al.
(författare)
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Investigation of the structural and optical properties of free-standing GaN grown by HVPE
- 2005
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Ingår i: Journal of Physics D. - : IOP Publishing. - 0022-3727 .- 1361-6463. ; 38:14, s. 2332-2337
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Tidskriftsartikel (refereegranskat)abstract
- The potential of the high-growth rate hydride vapour phase epitaxy technique and laser lift-off for the fabrication of free-standing GaN substrates is explored. Structural and optical properties of 300 νm thick free-standing GaN have been investigated employing different analytical techniques. The x-ray diffraction (XRD) measurements prove good crystalline quality of the material grown. A comparatively low value of (3 ± 1) × 1016 cm-3 of Ga vacancy-related defects is inferred from positron annihilation spectroscopy data. Complete strain relaxation is observed on the Ga-polar face of the free-standing GaN by XRD and Raman spectroscopy measurements. The strain-free homoepitaxy will significantly reduce the defect density, and thus an improvement of the device performance and lifetime can be realized. © 2005 IOP Publishing Ltd.
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