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Search: WFRF:(Li Aizhen)

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  • Gu, Yi, et al. (author)
  • Optical properties of InGaAsBi/GaAs strained quantum wells studied by temperature-dependent photoluminescence
  • 2013
  • In: Chinese Physics B. - : IOP Publishing. - 1674-1056. ; 22:3, s. 037802-
  • Journal article (peer-reviewed)abstract
    • The effect of bismuth on the optical properties of InGaAsBi/GaAs quantum well structures is investigated using the temperature-dependent photoluminescence from 12 K to 450 K. The incorporation of bismuth in the InGaAsBi quantum well is confirmed and found to result in a red shift of photoluminescence wavelength of 27.3 meV at 300 K. The photoluminescence intensity is significantly enhanced by about 50 times at 12 K with respect to that of the InGaAs quantum well due to the surfactant effect of bismuth. The temperature-dependent integrated photoluminescence intensities of the two samples reveal different behaviors related to various non-radiative recombination processes. The incorporation of bismuth also induces alloy non-uniformity in the quantum well, leading to an increased photoluminescence linewidth.
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Type of publication
journal article (1)
Type of content
peer-reviewed (1)
Author/Editor
Wang, Shu Min, 1963 (1)
Song, Yuxin, 1981 (1)
Zhang, Yonggang (1)
Ye, Hong, 1987 (1)
Gu, Yi (1)
Cao, Yuanying (1)
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Li, Aizhen (1)
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University
Chalmers University of Technology (1)
Language
English (1)
Research subject (UKÄ/SCB)
Natural sciences (1)
Engineering and Technology (1)
Year
2013 (1)

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