| 1. |
- Fang, Xiubo, et al.
(author)
-
Numerical modeling of GaN growth by MOCVD on metal substrate
- 2024
-
In: Digest of Technical Papers - SID International Symposium. - 2168-0159 .- 0097-966X. ; 55:S1, s. 1059-1063
-
Conference paper (peer-reviewed)abstract
- GaN materials have attracted great interest and have demonstrated remarkable potential in many fields. When growing GaN materials, substrate selection is of great importance. By virtue of their nominally unlimited size, easy removal, and excellent thermal conduction, metal substrates have been suggested as an alternative to the commonly used substrates such as sapphire. GaN growth on metal substrates, however, is still quite rare, and many aspects remain unexplored. This paper uses computational fluid dynamics to perform a three-dimensional numerical simulation of the GaNMOCVD reaction chamber. We investigated the influence of the graphite containers' rotational velocity and the metal matrix's temperature at various locations. When the pressure within the MOCVD chamber remains constant, increasing the graphite tray's rotational velocity enhances the temperature field distribution within the chamber. However, the flow field becomes unstable when the rotation rate exceeds 1000 rpm. Our findings serve as a crucial benchmark for the future parameter optimization of MOCVD growth of GaN on metals.
|
|
| 2. |
- Pan, Kui, et al.
(author)
-
Monolithically and Vertically Integrated LED-on-FET Device Based on a Novel GaN Epitaxial Structure
- 2023
-
In: IEEE Transactions on Electron Devices. - 1557-9646 .- 0018-9383. ; 70:12, s. 6393-6398
-
Journal article (peer-reviewed)abstract
- Optoelectronic devices, such as light-emitting diodes (LEDs), based on GaN-based semiconductor compounds are widely used for their advantages of long life, high reliability, and low energy consumption. The persistent challenge is integrating LED with transistors to achieve smaller size, lighter weight, higher speed, and more reliable optoelectronic integrated circuits. Here, we report monolithically and vertically integrated LED-on-FET devices fabricated on a novel GaN epitaxial structure. The designed device structure and fabrication process are simple. It also eliminates the extra area occupied by the transistor, and the shared n-GaN layer between the LED and FET reduces interconnect resistance and improves reliability. The measured threshold voltage (V-Th) of the LED-on-FET device is extrapolated as 3.9 V at the voltage (V-DD) of 5 V, and V-Th decreases with the increase of V-DD . More importantly, the gate voltage (V-GS) shows good performance in modulated electroluminescence (EL) intensity and switching capability of the LED. The integrated LED efficiently emits light modulation with a wavelength of 440 nm at V-DD= 9 V and V-GS=4-9 V (step = 1 V), which are necessary for devices in applications, such as displays and smart lighting. This epitaxy structure and integration scheme is promising in achieving large-scale optoelectronic integrated circuits, such as the next-generation micro-LED and nano-LED with super compact integrated drivers.
|
|
